BUK9518-55
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK9518-55
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 125
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 25
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018
Ohm
Package:
SOT78
BUK9518-55
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK9518-55
Datasheet (PDF)
..1. Size:52K philips
buk9518-55.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9518-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 55 Vtechnology. The device features very ID Drain current (DC) 57 Alow on-state resist
0.1. Size:333K philips
buk9518-55a buk9618-55a.pdf
BUK9518-55A; BUK9618-55ATrenchMOS logic level FETRev. 01 27 August 2001 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9518-55A in SOT78 (TO-220AB)2BUK9618-55A in SOT404 (D -PAK).2. Features TrenchMOS technology Q
0.2. Size:225K inchange semiconductor
buk9518-55a.pdf
isc N-Channel MOSFET Transistor BUK9518-55AFEATURESStatic drain-source on-resistance:RDS(on) 16mFully characterized avalanche voltage and current100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONAutomotive and general purpose power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME
6.1. Size:47K philips
buk9518-30 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9518-30 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 30 Vtechnology. The device features very ID Drain current (DC) 55 Alow on-state resist
Datasheet: BUK7880-55
, BUK9120-48TC
, BUK9506-30
, BUK9508-55
, BUK9510-30
, BUK9514-30
, BUK9514-55
, BUK9518-30
, NCEP15T14
, BUK9520-55
, BUK9524-55
, BUK9528-55
, BUK9535-55
, BUK9606-30
, BUK9608-55
, BUK9610-30
, BUK9614-30
.