BUK9535-55
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK9535-55
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 85
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 17
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035
Ohm
Package:
SOT78
BUK9535-55
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK9535-55
Datasheet (PDF)
..1. Size:53K philips
buk9535-55 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9535-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 55 Vtechnology. The device features very ID Drain current (DC) 34 Alow on-state resist
0.1. Size:71K philips
buk9535-55a buk9635-55a.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9535-55A Logic level FET BUK9635-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 55 VTO220AB and SOT404 . Using ID Drain current (DC) 34 Atrench technolo
6.1. Size:337K philips
buk9535-100a buk9635-100a.pdf
BUK9535-100A;BUK9635-100ATrenchMOS logic level FETRev. 01 22 January 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9535-100A in SOT78 (TO-220AB)BUK9635-100A in SOT404 (D 2-PAK).2. Features TrenchMOS t
8.1. Size:325K philips
buk953r2-40 buk963r2-40b buk9e3r2-40b.pdf
BUK95/96/9E3R2-40BTrenchMOS logic level FETRev. 04 14 November 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible.1.3 Applications A
8.2. Size:217K nxp
buk953r2-40e.pdf
BUK953R2-40EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive
8.3. Size:214K nxp
buk953r5-60e.pdf
BUK953R5-60EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive
Datasheet: BUK9510-30
, BUK9514-30
, BUK9514-55
, BUK9518-30
, BUK9518-55
, BUK9520-55
, BUK9524-55
, BUK9528-55
, AON7403
, BUK9606-30
, BUK9608-55
, BUK9610-30
, BUK9614-30
, BUK9614-55
, BUK9618-30
, BUK9618-55
, BUK9620-55
.