BUK9535-55 Todos los transistores

 

BUK9535-55 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK9535-55

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 85 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 17 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm

Encapsulados: SOT78

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BUK9535-55 datasheet

 ..1. Size:53K  philips
 buk9535-55 2.pdf pdf_icon

BUK9535-55

Philips Semiconductors Product specification TrenchMOS transistor BUK9535-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 55 V technology. The device features very ID Drain current (DC) 34 A low on-state resist

 0.1. Size:71K  philips
 buk9535-55a buk9635-55a.pdf pdf_icon

BUK9535-55

Philips Semiconductors Product specification TrenchMOS transistor BUK9535-55A Logic level FET BUK9635-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 34 A trench technolo

 6.1. Size:337K  philips
 buk9535-100a buk9635-100a.pdf pdf_icon

BUK9535-55

BUK9535-100A; BUK9635-100A TrenchMOS logic level FET Rev. 01 22 January 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9535-100A in SOT78 (TO-220AB) BUK9635-100A in SOT404 (D 2-PAK). 2. Features TrenchMOS t

 8.1. Size:325K  philips
 buk953r2-40 buk963r2-40b buk9e3r2-40b.pdf pdf_icon

BUK9535-55

BUK95/96/9E3R2-40B TrenchMOS logic level FET Rev. 04 14 November 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible. 1.3 Applications A

MOSTRAR MÁS

Otros transistores... BUK9510-30 , BUK9514-30 , BUK9514-55 , BUK9518-30 , BUK9518-55 , BUK9520-55 , BUK9524-55 , BUK9528-55 , AO3400A , BUK9606-30 , BUK9608-55 , BUK9610-30 , BUK9614-30 , BUK9614-55 , BUK9618-30 , BUK9618-55 , BUK9620-55 .

History: BUK9840-55

 

 

 


 
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