All MOSFET. IRF830 Datasheet

 

IRF830 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF830

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 100 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 4.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 22 nC

Drain-Source Capacitance (Cd): 800 pF

Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm

Package: TO220

IRF830 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF830 Datasheet (PDF)

0.1. irf830 1.pdf Size:58K _philips

IRF830
IRF830

Philips Semiconductors Product specification PowerMOS transistor IRF830 Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V High thermal cycling performance Low thermal resistance ID = 5.9 AgRDS(ON) 1.5 sGENERAL DESCRIPTION PINNING SOT78 (TO220AB)N-channel, enhancement mode PIN DESCRIPTI

0.2. irf830 irf831 irf832 irf833-fi.pdf Size:481K _st

IRF830
IRF830

 0.3. irf830.pdf Size:92K _st

IRF830
IRF830

IRF830 N - CHANNEL 500V - 1.35 - 4.5A - TO-220PowerMESH MOSFETTYPE VDSS RDS(on) IDIRF830 500 V

0.4. irf830b irfs830b.pdf Size:888K _fairchild_semi

IRF830
IRF830

November 2001IRF830B/IRFS830B500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 500V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been especially tailored to

 0.5. irf830b.pdf Size:888K _fairchild_semi

IRF830
IRF830

November 2001IRF830B/IRFS830B500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 500V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been especially tailored to

0.6. irf830 irf830pbf.pdf Size:875K _international_rectifier

IRF830
IRF830

PD - 94881IRF830PbF Lead-Free12/10/03Document Number: 91063 www.vishay.com1IRF830PbFDocument Number: 91063 www.vishay.com2IRF830PbFDocument Number: 91063 www.vishay.com3IRF830PbFDocument Number: 91063 www.vishay.com4IRF830PbFDocument Number: 91063 www.vishay.com5IRF830PbFDocument Number: 91063 www.vishay.com6IRF830PbFTO-220AB Package Outline

0.7. irf8306mtrpbf.pdf Size:267K _international_rectifier

IRF830
IRF830

PD - 97670IRF8306MPbFIRF8306MTRPbFHEXFET Power MOSFET plus Schottky Diode Typical values (unless otherwise specified)l RoHS Compliant Containing No Lead and Halogen Free VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode30V max 20V max 1.8m@ 10V 2.8m@ 4.5Vl Low Profile (

0.8. irf8301m.pdf Size:338K _international_rectifier

IRF830
IRF830

StrongIRFETIRF8301MTRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l Ultra-low RDS(on)VDSS VGS RDS(on) RDS(on) l Low Profile (

0.9. irf830as.pdf Size:155K _international_rectifier

IRF830
IRF830

PD- 92006ASMPS MOSFETIRF830AS/LHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 1.40 5.0A High Speed Power SwitchingBenefits Low Gate Charge Qg Results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Curre

0.10. irf830s.pdf Size:326K _international_rectifier

IRF830
IRF830

PD - 95542IRF830SPbF Lead-FreeSMD-2207/21/04Document Number: 91064 www.vishay.com1IRF830SPbFDocument Number: 91064 www.vishay.com2IRF830SPbFDocument Number: 91064 www.vishay.com3IRF830SPbFDocument Number: 91064 www.vishay.com4IRF830SPbFDocument Number: 91064 www.vishay.com5IRF830SPbFDocument Number: 91064 www.vishay.com6IRF830SPbFPeak Diode

0.11. irf830a.pdf Size:108K _international_rectifier

IRF830
IRF830

PD- 91878CSMPS MOSFETIRF830AHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 1.40 5.0A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Curren

0.12. irf830as-lpbf.pdf Size:676K _international_rectifier

IRF830
IRF830

PD- 95139SMPS MOSFETIRF830AS/LPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 1.40 5.0A High Speed Power Switching Lead-FreeBenefits Low Gate Charge Qg Results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Vol

0.13. irf8304mpbf.pdf Size:216K _international_rectifier

IRF830
IRF830

PD - 97668IRF8304MPbFIRF8304MTRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS Compliant and Halogen Free VDSS VGS RDS(on) RDS(on) l Low Profile (

0.14. irf8302mpbf.pdf Size:220K _international_rectifier

IRF830
IRF830

PD - 97667IRF8302MPbFIRF8302MTRPbFHEXFET Power MOSFET plus Schottky Diode Typical values (unless otherwise specified)l RoHs Compliant and Halogen-Free VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode30V max 20V max 1.4m@ 10V 2.2m@ 4.5Vl Low Profile (

0.15. irf830apbf.pdf Size:168K _international_rectifier

IRF830
IRF830

PD- 94820SMPS MOSFETIRF830APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 1.40 5.0A High speed power switching Lead-FreeBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Volt

0.16. irf8308mpbf irf8308mtrpbf.pdf Size:268K _international_rectifier

IRF830
IRF830

PD -97671IRF8308MPbFIRF8308MTRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Low Profile (

0.17. irf830a.pdf Size:911K _samsung

IRF830
IRF830

Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 1.169 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V

0.18. irfp430-433 irf830-833.pdf Size:345K _samsung

IRF830
IRF830

0.19. irf830alpbf irf830aspbf sihf830al sihf830as.pdf Size:207K _vishay

IRF830
IRF830

IRF830AS, IRF830AL, SiHF830AS, SiHF830ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) (Max.) ()VGS = 10 V 1.40 Low Gate Charge Qg Results in Simple DriveQg (Max.) (nC) 24RequirementQgs (nC) 6.3 Improved Gate, Avalanche and Dynamic dV/dtQgd (nC) 11 Ruggedness Fully Characterize

0.20. irf830a sihf830a.pdf Size:1091K _vishay

IRF830
IRF830

IRF830A, SiHF830AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 1.4RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 24 COMPLIANTRuggednessQgs (nC) 6.3 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 11and CurrentConfigurati

0.21. irf830lpbf irf830spbf sihf830l.pdf Size:174K _vishay

IRF830
IRF830

IRF830S, SiHF830S, IRF830L, SiHF830Lwww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Surface mountVDS (V) 500 Available in tape and reel RDS(on) ()VGS = 10 V 1.5 Dynamic dV/dt ratingAvailableQg (Max.) (nC) 38 Repetitive avalanche ratedQgs (nC) 5.0 Fast switchingAvailableQgd (nC) 22 Ease of parallelingConfiguration Single

0.22. irf830 sihf830.pdf Size:201K _vishay

IRF830
IRF830

IRF830, SiHF830Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.5RoHS* Fast SwitchingQg (Max.) (nC) 38COMPLIANT Ease of ParallelingQgs (nC) 5.0Qgd (nC) 22 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDE

0.23. irf830apbf sihf830a.pdf Size:1093K _vishay

IRF830
IRF830

IRF830A, SiHF830AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 1.4RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 24 COMPLIANTRuggednessQgs (nC) 6.3 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 11and CurrentConfigurati

0.24. irf8301mtrpbf.pdf Size:338K _infineon

IRF830
IRF830

StrongIRFETIRF8301MTRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l Ultra-low RDS(on)VDSS VGS RDS(on) RDS(on) l Low Profile (

0.25. irf8304mpbf.pdf Size:273K _infineon

IRF830
IRF830

IRF8304MPbFDirectFET Power MOSFET l RoHS Compliant and Halogen Free Typical values (unless otherwise specified)l Low Profile (

0.26. irf830.rev0.pdf Size:62K _onsemi

IRF830
IRF830

IRF830Power Field Effect TransistorNChannel Enhancement ModeSilicon Gate TMOSThis TMOS Power FET is designed for high voltage, high speedpower switching applications such as switching regulators, converters,solenoid and relay drivers. http://onsemi.com Silicon Gate for Fast Switching SpeedsTMOS POWER FET Low RDS(on) to Minimize OnLosses, Specified at ElevatedTemp

0.27. hirf830.pdf Size:46K _hsmc

IRF830
IRF830

Spec. No. : MOS200407HI-SINCERITYIssued Date : 2004.10.01Revised Date : 2005.04.22MICROELECTRONICS CORP.Page No. : 1/4HIRF830 Series Pin AssignmentHIRF830 / HIRF830FTabN-CHANNEL POWER MOSFET3-Lead Plastic TO-220ABPackage Code: EPin 1: GatePin 2 & Tab: DrainDescriptionPin 3: SourceThis N - Channel MOSFETs provide the designer with the bestcombination of fast swi

0.28. irf830i-hf.pdf Size:95K _ape

IRF830
IRF830

IRF830I-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Ease of Paralleling D BVDSS 500V Fast Switching Characteristic RDS(ON) 1.5 Simple Drive Requirement ID 4.5AG RoHS Compliant & Halogen-FreeSDescriptionGAPEC MOSFET provide the power designer with the best combination ofDTO-220CFM(I)Sfast switching ,

0.29. irf830.pdf Size:95K _ape

IRF830
IRF830

IRF830RoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Ease of Paralleling D BVDSS 500V Fast Switching Characteristic RDS(ON) 1.5 Simple Drive Requirement ID 4.5AGSDescriptionGTO-220(P)DAPEC MOSFET provide the power designer with the best combination of fastSswitching , lower on-resistance and reasonable cost.

0.30. irf830s.pdf Size:1986K _kexin

IRF830
IRF830

SMD Type MOSFETN-Channel MOSFETIRF830S (KRF830S) Features VDS (V) = 500V ID = 4.5 A (VGS = 10V) RDS(ON) 1.5 (VGS = 10V) Fast Switching Repetitive Avalanche RatedDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 500V Gate-Source Voltage VGS 20 Tc=25 4.5 Continuous Drain Current ID

0.31. irf830fi.pdf Size:231K _inchange_semiconductor

IRF830
IRF830

isc N-Channel MOSFET Transistor IRF830FIDESCRIPTIONDrain Current I = 3.0A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesinged for high efficiency switch mode power supply.ABSO

0.32. irf830a.pdf Size:234K _inchange_semiconductor

IRF830
IRF830

INCHANGE Semiconductorisc N-Channel Mosfet Transistor IRF830AFEATURESDrain Current I =5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedLow Drive RequirementMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitch Mode Power SupplyUninterruptable Power SupplyHigh speed power switc

0.33. irf830.pdf Size:114K _inchange_semiconductor

IRF830

MOSFET INCHANGE IRF830 N-channel mosfet transistor Features With TO-220 package 1 2 3 Simple drive requirements Fast switching VDSS=500V; RDS(ON)1.5;ID=4.5A 1.gate 2.drain 3.source Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVDSS Drain-source voltage (VGS=0) 500 VVGS Gate-source voltage 20 V ID Drain Current-continuous@ TC=25 4

Datasheet: IRF820AL , IRF820AS , IRF820FI , IRF820S , IRF821 , IRF822 , IRF822FI , IRF823 , IRF9530 , IRF830A , IRF830AL , IRF830AS , IRF830FI , IRF830S , IRF831 , IRF831FI , IRF832 .

 

 
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