All MOSFET. BUK9606-30 Datasheet

 

BUK9606-30 MOSFET. Datasheet pdf. Equivalent


   Type Designator: BUK9606-30
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 187 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: SOT404

 BUK9606-30 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK9606-30 Datasheet (PDF)

 ..1. Size:51K  philips
buk9606-30 1.pdf

BUK9606-30
BUK9606-30

Philips Semiconductors Product specification TrenchMOS transistor BUK9606-30 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 30 Vmounting using trench technology. ID Drain current (DC) 75 AThedevice feat

 6.1. Size:56K  philips
buk9606-55a 1.pdf

BUK9606-30
BUK9606-30

Philips Semiconductors Product specification TrenchMOS transistor BUK9606-55A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. Using trench technology ID Drain current (DC) 75 Athe device fe

 6.2. Size:333K  philips
buk9506-75b buk9606-75b.pdf

BUK9606-30
BUK9606-30

BUK95/9606-75BTrenchMOS logic level FETRev. 02 30 September 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive TrenchMOS technology.Product availability:BUK9506-75B in SOT78 (TO-220AB)BUK9606-75B in SOT404 (D2-PAK).1.2 Features Very low on-state r

 6.3. Size:66K  philips
buk9506 buk9606-55a 2.pdf

BUK9606-30
BUK9606-30

Philips Semiconductors Product specification TrenchMOS transistor BUK9506-55A Logic level FET BUK9606-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 55 VTO220AB and SOT404 . Using ID Drain current (DC) 75 Atrench technolo

 6.4. Size:931K  nxp
buk9606-75b.pdf

BUK9606-30
BUK9606-30

BUK9606-75BN-channel TrenchMOS logic level FETRev. 4 20 July 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

 6.5. Size:819K  nxp
buk9606-40b.pdf

BUK9606-30
BUK9606-30

BUK9606-40BN-channel TrenchMOS logic level FETRev. 02 1 February 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Featu

 6.6. Size:808K  nxp
buk9606-55a.pdf

BUK9606-30
BUK9606-30

BUK9606-55AN-channel TrenchMOS logic level FETRev. 04 31 May 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

 6.7. Size:687K  nxp
buk9606-55b.pdf

BUK9606-30
BUK9606-30

BUK9606-55BN-channel TrenchMOS FETRev. 04 23 July 2009 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features and benefits Low cond

Datasheet: BUK9514-30 , BUK9514-55 , BUK9518-30 , BUK9518-55 , BUK9520-55 , BUK9524-55 , BUK9528-55 , BUK9535-55 , AO3401 , BUK9608-55 , BUK9610-30 , BUK9614-30 , BUK9614-55 , BUK9618-30 , BUK9618-55 , BUK9620-55 , BUK9624-55 .

History: IXTK21N100

 

 
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