BUK9606-30 - Даташиты. Аналоги. Основные параметры

Philips Semiconductors Product specification TrenchMOS transistor BUK9606-30 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 30 Vmounting using trench technology. ID Drain current (DC) 75 AThedevice feat

Philips Semiconductors Product specification TrenchMOS transistor BUK9606-55A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. Using trench technology ID Drain current (DC) 75 Athe device fe

BUK95/9606-75BTrenchMOS logic level FETRev. 02 30 September 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive TrenchMOS technology.Product availability:BUK9506-75B in SOT78 (TO-220AB)BUK9606-75B in SOT404 (D2-PAK).1.2 Features Very low on-state r

Philips Semiconductors Product specification TrenchMOS transistor BUK9506-55A Logic level FET BUK9606-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 55 VTO220AB and SOT404 . Using ID Drain current (DC) 75 Atrench technolo

BUK9606-75BN-channel TrenchMOS logic level FETRev. 4 20 July 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

BUK9606-40BN-channel TrenchMOS logic level FETRev. 02 1 February 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Featu

BUK9606-55AN-channel TrenchMOS logic level FETRev. 04 31 May 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

BUK9606-55BN-channel TrenchMOS FETRev. 04 23 July 2009 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features and benefits Low cond