BUK9506-30 PDF and Equivalents Search

 

BUK9506-30 Specs and Replacement

Type Designator: BUK9506-30

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 187 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: SOT78

BUK9506-30 substitution

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BUK9506-30 datasheet

 ..1. Size:48K  philips
 buk9506-30 1.pdf pdf_icon

BUK9506-30

Philips Semiconductors Product specification TrenchMOS transistor BUK9506-30 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 30 V technology. The device features very ID Drain current (DC) 75 A low on-state resist... See More ⇒

 6.1. Size:332K  philips
 buk9506-55a.pdf pdf_icon

BUK9506-30

BUK9506-55A; BUK9606-55A; BUK9E06-55A TrenchMOS logic level FET Rev. 03 23 July 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9506-55A in SOT78 (TO-220AB); BUK9606-55A in SOT404 (D2-PAK); BUK9E06-55A in SOT226 (I2-PAK). ... See More ⇒

 6.2. Size:333K  philips
 buk9506-75b buk9606-75b.pdf pdf_icon

BUK9506-30

BUK95/9606-75B TrenchMOS logic level FET Rev. 02 30 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. Product availability BUK9506-75B in SOT78 (TO-220AB) BUK9606-75B in SOT404 (D2-PAK). 1.2 Features Very low on-state r... See More ⇒

 7.1. Size:66K  philips
 buk9506 buk9606-55a 2.pdf pdf_icon

BUK9506-30

Philips Semiconductors Product specification TrenchMOS transistor BUK9506-55A Logic level FET BUK9606-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 75 A trench technolo... See More ⇒

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Detailed specifications: BUK7628-55 , BUK7635-55 , BUK7675-55 , BUK78150-55 , BUK7830-30 , BUK7840-55 , BUK7880-55 , BUK9120-48TC , 18N50 , BUK9508-55 , BUK9510-30 , BUK9514-30 , BUK9514-55 , BUK9518-30 , BUK9518-55 , BUK9520-55 , BUK9524-55 .

History: IRLR8113

Keywords - BUK9506-30 MOSFET specs

 BUK9506-30 cross reference
 BUK9506-30 equivalent finder
 BUK9506-30 pdf lookup
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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