BUK9506-30 Todos los transistores

 ..1. Size:48K  philips
 buk9506-30 1.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK9506-30 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench VDS Drain-source voltage 30 V technology. The device features very ID Drain current (DC) 75 A low on-state resist

 6.1. Size:332K  philips
 buk9506-55a.pdf

BUK9506-55A; BUK9606-55A; BUK9E06-55A TrenchMOS logic level FET Rev. 03 23 July 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9506-55A in SOT78 (TO-220AB); BUK9606-55A in SOT404 (D2-PAK); BUK9E06-55A in SOT226 (I2-PAK).

 6.2. Size:333K  philips
 buk9506-75b buk9606-75b.pdf

BUK95/9606-75B TrenchMOS logic level FET Rev. 02 30 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. Product availability BUK9506-75B in SOT78 (TO-220AB) BUK9606-75B in SOT404 (D2-PAK). 1.2 Features Very low on-state r

 7.1. Size:66K  philips
 buk9506 buk9606-55a 2.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK9506-55A Logic level FET BUK9606-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 75 A trench technolo