All MOSFET. BUK9120-48TC Datasheet

 

BUK9120-48TC Datasheet and Replacement


   Type Designator: BUK9120-48TC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 116 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 48 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOT426
 

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BUK9120-48TC Datasheet (PDF)

 ..1. Size:67K  philips
 buk9120-48tc 3.pdf pdf_icon

BUK9120-48TC

Philips Semiconductors Product specification PowerMOS transistor BUK9120-48TC Voltage clamped logic level FETwith temperature sensing diodesGENERAL DESCRIPTION QUICK REFERENCE DATAProtected N-channel enhancement SYMBOL PARAMETER MIN. TYP. MAX. UNITmode logic level field-effect powertransistor in a plastic envelope V(CL)DSR Drain-source clamp voltage 40 45 55 Vsuitable for surfa

 9.1. Size:376K  philips
 buk9107-55ate buk9907-55ate.pdf pdf_icon

BUK9120-48TC

BUK91/9907-55ATETrenchPLUS logic level FETRev. 01 7 February 2002 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on state resistance and TrenchPLUSdiodes for clamping, ElectroStatic Discharge (ESD) protection and temperaturesensing.Product availability:BUK9107-55ATE in

Datasheet: BUK7624-55 , BUK7628-55 , BUK7635-55 , BUK7675-55 , BUK78150-55 , BUK7830-30 , BUK7840-55 , BUK7880-55 , IRFB31N20D , BUK9506-30 , BUK9508-55 , BUK9510-30 , BUK9514-30 , BUK9514-55 , BUK9518-30 , BUK9518-55 , BUK9520-55 .

History: HUF75321D3S

Keywords - BUK9120-48TC MOSFET datasheet

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