TPCS8303
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPCS8303
Código: S8303
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.1
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 20
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12
V
|Id|ⓘ - Corriente continua de drenaje: 5
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.2
V
Qgⓘ - Carga de la puerta: 33
nC
trⓘ - Tiempo de subida: 5
nS
Cossⓘ - Capacitancia
de salida: 380
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.021
Ohm
Paquete / Cubierta:
TSSOP8
- Selección de transistores por parámetros
TPCS8303
Datasheet (PDF)
..1. Size:224K toshiba
tpcs8303.pdf 
TPCS8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPCS8303 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Machines and Tools Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 15 m (typ.) High forward transfer admittance: |Yfs| = 18 S (typ.) Low leakage current:
7.1. Size:193K toshiba
tpcs8302.pdf
TPCS8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPCS8302 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 22 m (typ.) High forward transfer admittance: |Yfs| = 12 S (typ.) Low leakage curr
9.1. Size:303K toshiba
tpcs8102.pdf
TPCS8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II) TPCS8102 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PCs Small footprint due to small and thin package Low drain-source ON resistance: R = 16 m (typ.) DS (ON) High forward transfer admittance: |Y | = 17 S (typ.) fs Low leakage current: IDSS = -10
9.2. Size:218K toshiba
tpcs8204.pdf
TPCS8204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8204 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: R = 13 m (typ.) DS (ON) High forward transfer admittance: |Y | = 15 S (typ.) fs Low leakage
9.3. Size:241K toshiba
tpcs8210.pdf
TPCS8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8210 Lithium Ion Battery Applications Unit: mm Small footprint due to small and thin package Low drain-source ON resistance: R = 19 m (typ.) DS (ON) High forward transfer admittance: |Y | = 9.2 S (typ.) fs Low leakage current: IDSS = 10 A (max) (VDS = 20 V) Enhancement
9.4. Size:266K toshiba
tpcs8105.pdf
TPCS8105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCS8105 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 9.6 m (typ.) High forward transfer admittance: |Yfs| = 23 S (typ.) Low leakage cur
9.5. Size:215K toshiba
tpcs8008-h.pdf
TPCS8008-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH-MOS) TPCS8008-H High-Speed Switching Applications Unit: mmSwitching Regulator Applications DC/DC Converter Applications Low drain-source ON-resistance: RDS (ON) = 0.48 (typ.) High forward transfer admittance: |Yfs| = 1.8 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS =
9.6. Size:235K toshiba
tpcs8007-h.pdf
TPCS8007-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH-MOS) TPCS8007-H High-Speed Switching Applications Unit: mmSwitching Regulator Applications DC/DC Converter Applications Low drain-source ON-resistance: RDS (ON) = 0.36 (typ.) High forward transfer admittance: |Yfs| = 2.1 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS =
9.7. Size:235K toshiba
tpcs8009-h.pdf
TPCS8009-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH-MOS) TPCS8009-H High-Speed Switching Applications Unit: mmSwitching Regulator Applications DC/DC Converter Applications Low drain-source ON-resistance: RDS (ON) = 0.27 (typ.) High forward transfer admittance: |Yfs| = 2.1 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS =
9.8. Size:220K toshiba
tpcs8211.pdf
TPCS8211 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8211 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Machines and Tools Small footprint due to small and thin package Low drain-source ON resistance: R = 16 m (typ.) DS (ON) High forward transfer admittance: |Y | = 11 S (typ.) fs Low leakage cur
9.9. Size:218K toshiba
tpcs8208.pdf
TPCS8208 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8208 Lithium Ion Battery Applications Unit: mm Small footprint due to small and thin package Low drain-source ON resistance: R = 13 m (typ.) DS (ON) High forward transfer admittance: |Y | = 15 S (typ.) fs Low leakage current: IDSS = 10 A (max) (VDS = 20 V) Enhancement-
9.10. Size:157K toshiba
tpcs8006.pdf
TPCS8006 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) TPCS8006 High-Speed Switching Applications Unit: mmSwitching Regulator Applications DC-DC Converter Applications Low drain-source ON resistance: RDS (ON) = 0.8 (typ.) High forward transfer admittance: |Yfs| = 1.6 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 250 V)
9.11. Size:223K toshiba
tpcs8214.pdf
TPCS8214 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) TPCS8214 Lithium Ion Battery Applications Unit: mm Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 10.5m (typ.) High forward transfer admittance: |Yfs| = 10S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement mode:
9.12. Size:222K toshiba
tpcs8209.pdf
TPCS8209 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8209 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Machines and Tools Small footprint due to small and thin package Low drain-source ON resistance: R = 19 m (typ.) DS (ON) High forward transfer admittance: |Y | = 9.2 S (typ.) fs Low leakage cu
9.13. Size:255K toshiba
tpcs8104.pdf
TPCS8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCS8104 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: R = 8.1 m (typ.) DS (ON) High forward transfer admittance: |Y | = 23 S (typ.) fs Low leakag
9.14. Size:311K toshiba
tpcs8101.pdf
TPCS8101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II) TPCS8101 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PCs Small footprint due to small and thin package Low drain-source ON resistance: R = 15 m (typ.) DS (ON) High forward transfer admittance: |Y | = 12 S (typ.) fs Low leakage current: IDSS = -10
9.15. Size:224K toshiba
tpcs8004.pdf
TPCS8004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) TPCS8004 High Speed Switching Applications Unit: mmSwitching Regulator Applications DC-DC Converters Small footprint due to small and thin package Low drain-source ON resistance: R = 0.56 (typ.) DS (ON) High forward transfer admittance: |Y | = 1.8 S (typ.) fs Low leakage curr
9.16. Size:289K toshiba
tpcs8205.pdf
TPCS8205 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) TPCS8205 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PCs Small footprint due to small and thin package Low drain-source ON resistance: R = 30 m (typ.) DS (ON) High forward transfer admittance: |Y | = 10 S (typ.) fs Low leakage current: IDSS = 10
9.17. Size:220K toshiba
tpcs8212.pdf
TPCS8212 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8212 Lithium Ion Battery Applications Unit: mm Small footprint due to small and thin package Low drain-source ON resistance: R = 16 m (typ.) DS (ON) High forward transfer admittance: |Y | = 11 S (typ.) fs Low leakage current: IDSS = 10 A (max) (VDS = 20 V) Enhancement-
9.18. Size:180K toshiba
tpcs8213.pdf
TPCS8213 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS) TPCS8213 Lithium Ion Battery Applications Unit: mm Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 8.4 m (typ.) High forward transfer admittance: |Yfs| = 13 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 20 V) Enhancement-mod
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