TPCS8303. Аналоги и основные параметры
Наименование производителя: TPCS8303
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 1.1 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 5 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 5 ns
Cossⓘ - Выходная емкость: 380 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.021 Ohm
Тип корпуса: TSSOP8
Аналог (замена) для TPCS8303
- подборⓘ MOSFET транзистора по параметрам
TPCS8303 даташит
..1. Size:224K toshiba
tpcs8303.pdf 
TPCS8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPCS8303 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Machines and Tools Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 15 m (typ.) High forward transfer admittance Yfs = 18 S (typ.) Low leakage current
7.1. Size:193K toshiba
tpcs8302.pdf 
TPCS8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPCS8302 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 22 m (typ.) High forward transfer admittance Yfs = 12 S (typ.) Low leakage curr
9.1. Size:303K toshiba
tpcs8102.pdf 
TPCS8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II) TPCS8102 Lithium Ion Battery Applications Unit mm Portable Equipment Applications Notebook PCs Small footprint due to small and thin package Low drain-source ON resistance R = 16 m (typ.) DS (ON) High forward transfer admittance Y = 17 S (typ.) fs Low leakage current IDSS = -10
9.2. Size:218K toshiba
tpcs8204.pdf 
TPCS8204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8204 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance R = 13 m (typ.) DS (ON) High forward transfer admittance Y = 15 S (typ.) fs Low leakage
9.3. Size:241K toshiba
tpcs8210.pdf 
TPCS8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8210 Lithium Ion Battery Applications Unit mm Small footprint due to small and thin package Low drain-source ON resistance R = 19 m (typ.) DS (ON) High forward transfer admittance Y = 9.2 S (typ.) fs Low leakage current IDSS = 10 A (max) (VDS = 20 V) Enhancement
9.4. Size:266K toshiba
tpcs8105.pdf 
TPCS8105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCS8105 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 9.6 m (typ.) High forward transfer admittance Yfs = 23 S (typ.) Low leakage cur
9.5. Size:215K toshiba
tpcs8008-h.pdf 
TPCS8008-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH -MOS ) TPCS8008-H High-Speed Switching Applications Unit mm Switching Regulator Applications DC/DC Converter Applications Low drain-source ON-resistance RDS (ON) = 0.48 (typ.) High forward transfer admittance Yfs = 1.8 S (typ.) Low leakage current IDSS = 100 A (max) (VDS =
9.6. Size:235K toshiba
tpcs8007-h.pdf 
TPCS8007-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH -MOS ) TPCS8007-H High-Speed Switching Applications Unit mm Switching Regulator Applications DC/DC Converter Applications Low drain-source ON-resistance RDS (ON) = 0.36 (typ.) High forward transfer admittance Yfs = 2.1 S (typ.) Low leakage current IDSS = 100 A (max) (VDS =
9.7. Size:235K toshiba
tpcs8009-h.pdf 
TPCS8009-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH -MOS ) TPCS8009-H High-Speed Switching Applications Unit mm Switching Regulator Applications DC/DC Converter Applications Low drain-source ON-resistance RDS (ON) = 0.27 (typ.) High forward transfer admittance Yfs = 2.1 S (typ.) Low leakage current IDSS = 100 A (max) (VDS =
9.8. Size:220K toshiba
tpcs8211.pdf 
TPCS8211 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8211 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Machines and Tools Small footprint due to small and thin package Low drain-source ON resistance R = 16 m (typ.) DS (ON) High forward transfer admittance Y = 11 S (typ.) fs Low leakage cur
9.9. Size:218K toshiba
tpcs8208.pdf 
TPCS8208 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8208 Lithium Ion Battery Applications Unit mm Small footprint due to small and thin package Low drain-source ON resistance R = 13 m (typ.) DS (ON) High forward transfer admittance Y = 15 S (typ.) fs Low leakage current IDSS = 10 A (max) (VDS = 20 V) Enhancement-
9.10. Size:157K toshiba
tpcs8006.pdf 
TPCS8006 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) TPCS8006 High-Speed Switching Applications Unit mm Switching Regulator Applications DC-DC Converter Applications Low drain-source ON resistance RDS (ON) = 0.8 (typ.) High forward transfer admittance Yfs = 1.6 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 250 V)
9.11. Size:223K toshiba
tpcs8214.pdf 
TPCS8214 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TPCS8214 Lithium Ion Battery Applications Unit mm Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 10.5m (typ.) High forward transfer admittance Yfs = 10S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 30 V) Enhancement mode
9.12. Size:222K toshiba
tpcs8209.pdf 
TPCS8209 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8209 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Machines and Tools Small footprint due to small and thin package Low drain-source ON resistance R = 19 m (typ.) DS (ON) High forward transfer admittance Y = 9.2 S (typ.) fs Low leakage cu
9.13. Size:255K toshiba
tpcs8104.pdf 
TPCS8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCS8104 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance R = 8.1 m (typ.) DS (ON) High forward transfer admittance Y = 23 S (typ.) fs Low leakag
9.14. Size:311K toshiba
tpcs8101.pdf 
TPCS8101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II) TPCS8101 Lithium Ion Battery Applications Unit mm Portable Equipment Applications Notebook PCs Small footprint due to small and thin package Low drain-source ON resistance R = 15 m (typ.) DS (ON) High forward transfer admittance Y = 12 S (typ.) fs Low leakage current IDSS = -10
9.15. Size:224K toshiba
tpcs8004.pdf 
TPCS8004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) TPCS8004 High Speed Switching Applications Unit mm Switching Regulator Applications DC-DC Converters Small footprint due to small and thin package Low drain-source ON resistance R = 0.56 (typ.) DS (ON) High forward transfer admittance Y = 1.8 S (typ.) fs Low leakage curr
9.16. Size:289K toshiba
tpcs8205.pdf 
TPCS8205 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) TPCS8205 Lithium Ion Battery Applications Unit mm Portable Equipment Applications Notebook PCs Small footprint due to small and thin package Low drain-source ON resistance R = 30 m (typ.) DS (ON) High forward transfer admittance Y = 10 S (typ.) fs Low leakage current IDSS = 10
9.17. Size:220K toshiba
tpcs8212.pdf 
TPCS8212 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8212 Lithium Ion Battery Applications Unit mm Small footprint due to small and thin package Low drain-source ON resistance R = 16 m (typ.) DS (ON) High forward transfer admittance Y = 11 S (typ.) fs Low leakage current IDSS = 10 A (max) (VDS = 20 V) Enhancement-
9.18. Size:180K toshiba
tpcs8213.pdf 
TPCS8213 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS ) TPCS8213 Lithium Ion Battery Applications Unit mm Small footprint due to a small and thin package Low drain-source ON-resistance RDS (ON) = 8.4 m (typ.) High forward transfer admittance Yfs = 13 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 20 V) Enhancement-mod
Другие MOSFET... TPCS8208
, TPCS8209
, TPCS8210
, TPCS8211
, TPCS8212
, TPCS8213
, TPCS8214
, TPCS8302
, 13N50
, TPCT4201
, TPCT4202
, TPCT4203
, TPCT4204
, 2SJ148
, 2SJ167
, 2SJ342
, 2SK1061
.
