SSM3K03TE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SSM3K03TE
   Código: DA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 0.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.3 V
   Cossⓘ - Capacitancia de salida: 9.3 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 12 Ohm
   Paquete / Cubierta: TESM

Búsqueda de reemplazo de MOSFET SSM3K03TE

SSM3K03TE Datasheet (PDF)

..1. Size:616K toshiba
ssm3k03te.pdf

SSM3K03TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03TE High Speed Switching Applications Unit: mmAnalog Switch Applications 1.20.050.80.05 2.5 V gate drive High input impedance Low gate threshold voltage: Vth = 0.7~1.3 V www.DataSheet4U.com Small package Absolute Maximum Ratings (Ta = 25C) Characteristics Symb

7.1. Size:211K toshiba
ssm3k03fe.pdf

SSM3K03FE NMOS SSM3K03FE : mm VthCMOS : Vth = 0.7~1.3 V

7.2. Size:261K toshiba
ssm3k03fv.pdf

SSM3K03FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FV High Speed Switching Applications Unit: mmAnalog Switch Applications 1.20.05 0.80.05 2.5-V gate drive High input impedance 1 Low gate threshold voltage: Vth = 0.7 to 1.3 V Optimum for high-density mounting in small packages 32Absolute Maximum Ratings (Ta = 25C) Char

8.1. Size:305K toshiba
ssm3k01f.pdf

SSM3K01F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01F High Speed Switching Applications Unit: mm Small package Low on resistance : Ron = 120 m (max) (VGS = 4 V) : Ron = 150 m (max) (VGS = 2.5 V) Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Uni

8.2. Size:312K toshiba
ssm3k05fu.pdf

SSM3K05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K05FU High Speed Switching Applications Small package Unit: mm Low on resistance : Ron = 0.8 max (@VGS = 4 V) : Ron = 1.2 max (@VGS = 2.5 V) Low gate threshold voltage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDS 20 VGate-source

8.3. Size:210K toshiba
ssm3k09fu.pdf

SSM3K09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K09FU High Speed Switching Applications Unit: mm Small package Low on resistance : Ron = 0.7 (max) (@VGS = 10 V) : Ron = 1.2 (max) (@VGS = 4 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source voltage VDS 30 VGate-Source voltage VGSS 20 VDC ID

8.4. Size:582K toshiba
ssm3k04fe.pdf

SSM3K04FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FE High Speed Switching Applications Unit: mm With built-in gate-source resistor: RGS = 1 M (typ.) 2.5 V gate drive Low gate threshold voltage: Vth = 0.7~1.3 V Small package Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDS 20 VGat

8.5. Size:559K toshiba
ssm3k04fv.pdf

SSM3K04FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FV High Speed Switching Applications Unit: mm1.20.05 With built-in gate-source resistor: RGS = 1 M (typ.) 0.80.05 2.5 V gate drive High input impedance Low gate threshold voltage: Vth = 0.7~1.3 V 1 Optimum for high-density mounting in small packages www.DataSheet4U.com

8.6. Size:188K toshiba
ssm3k01t.pdf

SSM3K01T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01T High Speed Switching Applications Unit: mm Small Package Low on Resistance: Ron = 120 m (max) (@VGS = 4 V) : Ron = 150 m (max) (@VGS = 2.5 V) Low Gate Threshold Voltage: Vth = 0.6~1.1 V (@VDS = 3 V, ID = 0.1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating

8.7. Size:302K toshiba
ssm3k02f.pdf

SSM3K02F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02F High Speed Switching Applications Unit: mm Small package Low on resistance: Ron = 200 m (max) (VGS = 4 V) : Ron = 250 m (max) (VGS = 2.5 V) Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit

8.8. Size:199K toshiba
ssm3k02t.pdf

SSM3K02T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02T High Speed Switching Applications Unit: mm Small package Low on resistance: Ron = 200 m (max) (VGS = 4 V) : Ron = 250 m (max) (VGS = 2.5 V) Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit

8.9. Size:616K toshiba
ssm3k04fu.pdf

SSM3K04FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FU High Speed Switch Applications Unit: mm With built-in gate-source resistor: RGS = 1 M (typ.) 2.5 V gate drive Low gate threshold voltage: Vth = 0.7~1.3 V Small package www.DataSheet4U.comAbsolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source vol

8.10. Size:238K toshiba
ssm3k04fs.pdf