SSM3K03TE - описание и поиск аналогов

SSM3K03TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03TE High Speed Switching Applications Unit mm Analog Switch Applications 1.2 0.05 0.8 0.05 2.5 V gate drive High input impedance Low gate threshold voltage Vth = 0.7 1.3 V www.DataSheet4U.com Small package Absolute Maximum Ratings (Ta = 25 C) Characteristics Symb

SSM3K03FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FV High Speed Switching Applications Unit mm Analog Switch Applications 1.2 0.05 0.8 0.05 2.5-V gate drive High input impedance 1 Low gate threshold voltage Vth = 0.7 to 1.3 V Optimum for high-density mounting in small packages 3 2 Absolute Maximum Ratings (Ta = 25 C) Char

SSM3K01F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01F High Speed Switching Applications Unit mm Small package Low on resistance Ron = 120 m (max) (VGS = 4 V) Ron = 150 m (max) (VGS = 2.5 V) Low gate threshold voltage Vth = 0.6 1.1 V (VDS = 3 V, ID = 0.1 mA) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Uni

SSM3K05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K05FU High Speed Switching Applications Small package Unit mm Low on resistance Ron = 0.8 max (@VGS = 4 V) Ron = 1.2 max (@VGS = 2.5 V) Low gate threshold voltage Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDS 20 V Gate-source

SSM3K09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K09FU High Speed Switching Applications Unit mm Small package Low on resistance Ron = 0.7 (max) (@VGS = 10 V) Ron = 1.2 (max) (@VGS = 4 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 30 V Gate-Source voltage VGSS 20 V DC ID

SSM3K04FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FE High Speed Switching Applications Unit mm With built-in gate-source resistor RGS = 1 M (typ.) 2.5 V gate drive Low gate threshold voltage Vth = 0.7 1.3 V Small package Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDS 20 V Gat

SSM3K04FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FV High Speed Switching Applications Unit mm 1.2 0.05 With built-in gate-source resistor RGS = 1 M (typ.) 0.8 0.05 2.5 V gate drive High input impedance Low gate threshold voltage Vth = 0.7 1.3 V 1 Optimum for high-density mounting in small packages www.DataSheet4U.com

SSM3K01T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01T High Speed Switching Applications Unit mm Small Package Low on Resistance Ron = 120 m (max) (@VGS = 4 V) Ron = 150 m (max) (@VGS = 2.5 V) Low Gate Threshold Voltage Vth = 0.6 1.1 V (@VDS = 3 V, ID = 0.1 mA) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating

SSM3K02F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02F High Speed Switching Applications Unit mm Small package Low on resistance Ron = 200 m (max) (VGS = 4 V) Ron = 250 m (max) (VGS = 2.5 V) Low gate threshold voltage Vth = 0.6 1.1 V (VDS = 3 V, ID = 0.1 mA) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit

SSM3K02T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02T High Speed Switching Applications Unit mm Small package Low on resistance Ron = 200 m (max) (VGS = 4 V) Ron = 250 m (max) (VGS = 2.5 V) Low gate threshold voltage Vth = 0.6 1.1 V (VDS = 3 V, ID = 0.1 mA) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit

SSM3K04FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FU High Speed Switch Applications Unit mm With built-in gate-source resistor RGS = 1 M (typ.) 2.5 V gate drive Low gate threshold voltage Vth = 0.7 1.3 V Small package www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source vol