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SSM3K16TE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSM3K16TE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 0.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 9.8 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
   Paquete / Cubierta: TESM
 

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SSM3K16TE Datasheet (PDF)

 ..1. Size:147K  toshiba
 ssm3k16te.pdf pdf_icon

SSM3K16TE

SSM3K16TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16TE High Speed Switching Applications Unit: mmAnalog Switch Applications Suitable for high-density mounting due to compact package Low on resistance: Ron = 3.0 (max) (@VGS = 4 V) : Ron = 4.0 (max) (@VGS = 2.5 V) : Ron = 15 (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25C)

 7.1. Size:149K  toshiba
 ssm3k16fu.pdf pdf_icon

SSM3K16TE

SSM3K16FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16FU High Speed Switching Applications Analog Switching Applications Unit: mm Suitable for high-density mounting due to compact package Low on resistance: Ron = 3.0 (max) (@VGS = 4 V) : Ron = 4.0 (max) (@VGS = 2.5 V) : Ron = 15 (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25

 7.2. Size:148K  toshiba
 ssm3k16fs.pdf pdf_icon

SSM3K16TE

SSM3K16FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16FS High Speed Switching Applications Unit: mmAnalog Switch Applications Suitable for high-density mounting due to compact package Low on resistance: Ron = 3.0 (max) (@VGS = 4 V) : Ron = 4.0 (max) (@VGS = 2.5 V) : Ron = 15 (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25C)

 7.3. Size:88K  toshiba
 ssm3k16fv.pdf pdf_icon

SSM3K16TE

SSM3K16FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16FV High Speed Switching Applications nit: mmAnalog Switch Applications 1.20.05 Suitable for high-density mounting due to compact package 0.80.05 Low on-resistance : Ron = 3.0 (max) (@VGS = 4 V) : Ron = 4.0 (max) (@VGS = 2.5 V) : Ron = 15 (max) (@VGS = 1.5 V) 1Absolute Max

MOSTRAR MÁS

Otros transistores... SSM3K03FE , SSM3K03FV , SSM3K03TE , SSM3K04FE , SSM3K04FS , SSM3K04FU , SSM3K04FV , SSM3K15TE , 13N50 , SSM3K311T , SSM3K7002AF , SSM6J215FE , 2SJ103 , 2SJ105 , 2SJ106 , 2SJ144 , 2SK117 .

History: PSMN5R8-40YS

 

 
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