SSM3K16TE Todos los transistores

 ..1. Size:147K  toshiba
 ssm3k16te.pdf

SSM3K16TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16TE High Speed Switching Applications Unit mm Analog Switch Applications Suitable for high-density mounting due to compact package Low on resistance Ron = 3.0 (max) (@VGS = 4 V) Ron = 4.0 (max) (@VGS = 2.5 V) Ron = 15 (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25 C)

 7.1. Size:149K  toshiba
 ssm3k16fu.pdf

 7.2. Size:148K  toshiba
 ssm3k16fs.pdf

SSM3K16FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16FS High Speed Switching Applications Unit mm Analog Switch Applications Suitable for high-density mounting due to compact package Low on resistance Ron = 3.0 (max) (@VGS = 4 V) Ron = 4.0 (max) (@VGS = 2.5 V) Ron = 15 (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25 C)

 7.3. Size:88K  toshiba
 ssm3k16fv.pdf

SSM3K16FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16FV High Speed Switching Applications nit mm Analog Switch Applications 1.2 0.05 Suitable for high-density mounting due to compact package 0.8 0.05 Low on-resistance Ron = 3.0 (max) (@VGS = 4 V) Ron = 4.0 (max) (@VGS = 2.5 V) Ron = 15 (max) (@VGS = 1.5 V) 1 Absolute Max

 7.4. Size:157K  toshiba
 ssm3k16ct.pdf

SSM3K16CT TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K16CT High-Speed Switching Applications Unit mm Analog Switch Applications Suitable for high-density mounting due to compact package 0.6 0.05 0.5 0.03 Low ON-resistance Ron = 3.0 (max) (@VGS = 4 V) Ron = 4.0 (max) (@VGS = 2.5 V) Ron = 15 (max) (@VGS = 1.5 V) Absolute