All MOSFET. SSM3K16TE Datasheet

 

SSM3K16TE Datasheet and Replacement


   Type Designator: SSM3K16TE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 0.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 9.8 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TESM
 

 SSM3K16TE substitution

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SSM3K16TE Datasheet (PDF)

 ..1. Size:147K  toshiba
 ssm3k16te.pdf pdf_icon

SSM3K16TE

SSM3K16TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16TE High Speed Switching Applications Unit: mmAnalog Switch Applications Suitable for high-density mounting due to compact package Low on resistance: Ron = 3.0 (max) (@VGS = 4 V) : Ron = 4.0 (max) (@VGS = 2.5 V) : Ron = 15 (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25C)

 7.1. Size:149K  toshiba
 ssm3k16fu.pdf pdf_icon

SSM3K16TE

SSM3K16FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16FU High Speed Switching Applications Analog Switching Applications Unit: mm Suitable for high-density mounting due to compact package Low on resistance: Ron = 3.0 (max) (@VGS = 4 V) : Ron = 4.0 (max) (@VGS = 2.5 V) : Ron = 15 (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25

 7.2. Size:148K  toshiba
 ssm3k16fs.pdf pdf_icon

SSM3K16TE

SSM3K16FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16FS High Speed Switching Applications Unit: mmAnalog Switch Applications Suitable for high-density mounting due to compact package Low on resistance: Ron = 3.0 (max) (@VGS = 4 V) : Ron = 4.0 (max) (@VGS = 2.5 V) : Ron = 15 (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25C)

 7.3. Size:88K  toshiba
 ssm3k16fv.pdf pdf_icon

SSM3K16TE

SSM3K16FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16FV High Speed Switching Applications nit: mmAnalog Switch Applications 1.20.05 Suitable for high-density mounting due to compact package 0.80.05 Low on-resistance : Ron = 3.0 (max) (@VGS = 4 V) : Ron = 4.0 (max) (@VGS = 2.5 V) : Ron = 15 (max) (@VGS = 1.5 V) 1Absolute Max

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Datasheet: SSM3K03FE , SSM3K03FV , SSM3K03TE , SSM3K04FE , SSM3K04FS , SSM3K04FU , SSM3K04FV , SSM3K15TE , 13N50 , SSM3K311T , SSM3K7002AF , SSM6J215FE , 2SJ103 , 2SJ105 , 2SJ106 , 2SJ144 , 2SK117 .

History: APM2306A | AOLF66610 | TPCS8303 | SI7664DP | IPB50N10S3L-16 | IPB60R210CFD7 | CSD17310Q5A

Keywords - SSM3K16TE MOSFET datasheet

 SSM3K16TE cross reference
 SSM3K16TE equivalent finder
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