SSM3K16TE MOSFET Datasheet: N-Ch, 20V, 0.1A. Full specification with pinout and replacement list

SSM3K16TE Specs and Replacement

Type Designator: SSM3K16TE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 0.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 9.8 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: TESM

SSM3K16TE substitution

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SSM3K16TE datasheet

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SSM3K16TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16TE High Speed Switching Applications Unit mm Analog Switch Applications Suitable for high-density mounting due to compact package Low on resistance Ron = 3.0 (max) (@VGS = 4 V) Ron = 4.0 (max) (@VGS = 2.5 V) Ron = 15 (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25 C)... See More ⇒

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SSM3K16FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16FS High Speed Switching Applications Unit mm Analog Switch Applications Suitable for high-density mounting due to compact package Low on resistance Ron = 3.0 (max) (@VGS = 4 V) Ron = 4.0 (max) (@VGS = 2.5 V) Ron = 15 (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25 C)... See More ⇒

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SSM3K16FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16FV High Speed Switching Applications nit mm Analog Switch Applications 1.2 0.05 Suitable for high-density mounting due to compact package 0.8 0.05 Low on-resistance Ron = 3.0 (max) (@VGS = 4 V) Ron = 4.0 (max) (@VGS = 2.5 V) Ron = 15 (max) (@VGS = 1.5 V) 1 Absolute Max... See More ⇒