2SK209 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK209 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK209 Audio Frequency Low Noise Amplifier Applications Unit: mm High |Yfs|: |Y | = 15 mS (typ.) at V = 10 V, V = 0 fs DS GS High breakdown voltage: V = -50 V GDS Low noise: NF = 1.0dB (typ.) at V = 10 V, I = 0.5 mA, f = 1 kHz, R = 1 k DS D G High input impedance: I = -1 nA (max) at V

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2090N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHINGThe 2SK2090 is an N-channel vertical MOS FET. Because PACKAGE DIMENSIONS (in mm)it can be driven by a voltage as low as 2.5 V and it is not2.1 0.1necessary to consider a drive current, this FET is ideal as an1.25 0.1actuator for low-current portable systems such as headphonestereos and

Ordering number:ENN4504N-Channel Junction Silicon FET2SK2091Impedance Converter ApplicationsApplications Package Dimensions Low-frequency general-purpose amplifier applica-unit:mmtions.2058 Impedance conversion.[2SK2091] Infrared sensor.0.30.15Features3 Small IGSS.0 to 0.1 Small Ciss. Ultrasmall-sized package permitting 2SK2091-1 20.3

2SK2094 Transistors 4V Drive Nch MOS FET 2SK2094 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET CPT36.55.12.30.5 Features 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 0.754) 4V drive. 0.650.92.3(1)Gate5) Drive circuits can be simple. 2.3(1) (2) (3)0.5(2)Drain1.06) Parallel use is ea

TransistorsSmall switching (60V, 10A)2SK2095NFFeatures FExternal dimensions (Units: mm)1) Low on-resistance.2) Fast switching speed.3) Wide SOA (safe operating area).4) Easily designed drive circuits.5) Low VGS(th).6) Easy to parallel.FStructureSilicon N-channel MOSFETFAbsolute maximum ratings (Ta = 25_C)FPackaging specifications94Transistors 2SK2095NFElectric

SMD Type MOSFETN-Channel MOSFET2SK2094-ZTO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features VDS (V) = 60V ID = 2A0.127 RDS(ON) 0.35 (VGS = 10V)+0.10.80-0.1max RDS(ON) 0.5 (VGS = 4V)+ 0.11 Gate2.3 0.60- 0.1+0.154 .60 -0.152 Drain3 Source Absolute Maximum Ratings Ta = 25Paramete