2SK209 Todos los transistores

 

2SK209 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK209

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.15 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V

|Id|ⓘ - Corriente continua de drenaje: 0.014 A

Tjⓘ - Temperatura máxima de unión: 125 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 250 Ohm

Encapsulados: SMINI SC59

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2SK209 datasheet

 ..1. Size:293K  toshiba
2sk209.pdf pdf_icon

2SK209

2SK209 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK209 Audio Frequency Low Noise Amplifier Applications Unit mm High Yfs Y = 15 mS (typ.) at V = 10 V, V = 0 fs DS GS High breakdown voltage V = -50 V GDS Low noise NF = 1.0dB (typ.) at V = 10 V, I = 0.5 mA, f = 1 kHz, R = 1 k DS D G High input impedance I = -1 nA (max) at V

 0.1. Size:59K  1
2sk2090.pdf pdf_icon

2SK209

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2090 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2090 is an N-channel vertical MOS FET. Because PACKAGE DIMENSIONS (in mm) it can be driven by a voltage as low as 2.5 V and it is not 2.1 0.1 necessary to consider a drive current, this FET is ideal as an 1.25 0.1 actuator for low-current portable systems such as headphone stereos and

 0.2. Size:89K  sanyo
2sk2091.pdf pdf_icon

2SK209

Ordering number ENN4504 N-Channel Junction Silicon FET 2SK2091 Impedance Converter Applications Applications Package Dimensions Low-frequency general-purpose amplifier applica- unit mm tions. 2058 Impedance conversion. [2SK2091] Infrared sensor. 0.3 0.15 Features 3 Small IGSS. 0 to 0.1 Small Ciss. Ultrasmall-sized package permitting 2SK2091- 1 2 0.3

 0.3. Size:129K  rohm
2sk2095n 1-5.pdf pdf_icon

2SK209

Otros transistores... 2SJ106 , 2SJ144 , 2SK117 , 2SK118 , 2SK170 , 2SK184 , 2SK1875 , 2SK208 , AO3400A , 2SK210 , 2SK211 , 2SK246 , 2SK30ATM , 2SK330 , 2SK3376CT , 2SK3376MFV , 2SK3376TK .

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