2SK209 - описание и поиск аналогов

2SK209 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK209 Audio Frequency Low Noise Amplifier Applications Unit mm High Yfs Y = 15 mS (typ.) at V = 10 V, V = 0 fs DS GS High breakdown voltage V = -50 V GDS Low noise NF = 1.0dB (typ.) at V = 10 V, I = 0.5 mA, f = 1 kHz, R = 1 k DS D G High input impedance I = -1 nA (max) at V

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2090 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2090 is an N-channel vertical MOS FET. Because PACKAGE DIMENSIONS (in mm) it can be driven by a voltage as low as 2.5 V and it is not 2.1 0.1 necessary to consider a drive current, this FET is ideal as an 1.25 0.1 actuator for low-current portable systems such as headphone stereos and

Ordering number ENN4504 N-Channel Junction Silicon FET 2SK2091 Impedance Converter Applications Applications Package Dimensions Low-frequency general-purpose amplifier applica- unit mm tions. 2058 Impedance conversion. [2SK2091] Infrared sensor. 0.3 0.15 Features 3 Small IGSS. 0 to 0.1 Small Ciss. Ultrasmall-sized package permitting 2SK2091- 1 2 0.3

2SK2094 Transistors 4V Drive Nch MOS FET 2SK2094 Structure External dimensions (Unit mm) Silicon N-channel MOS FET CPT3 6.5 5.1 2.3 0.5 Features 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 0.75 4) 4V drive. 0.65 0.9 2.3 (1)Gate 5) Drive circuits can be simple. 2.3 (1) (2) (3) 0.5 (2)Drain 1.0 6) Parallel use is ea

Transistors Small switching (60V, 10A) 2SK2095N FFeatures FExternal dimensions (Units mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Easily designed drive circuits. 5) Low VGS(th). 6) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 94 Transistors 2SK2095N FElectric

SMD Type MOSFET N-Channel MOSFET 2SK2094-Z TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features VDS (V) = 60V ID = 2A 0.127 RDS(ON) 0.35 (VGS = 10V) +0.1 0.80-0.1 max RDS(ON) 0.5 (VGS = 4V) + 0.1 1 Gate 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Paramete