2SJ248 Todos los transistores

2SJ248 Silicon P Channel MOS FET REJ03G0855-0200 (Previous ADE-208-1189) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline RENESAS Package code PRSS0003AD-A

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ243 P-CHANNEL MOS FET FOR SWITCHING The 2SJ243 is a P-channel vertical type MOS FET that is driven PACKAGE DIMENSIONS (in mm) at 2.5 V. 0.3 0.05 Because this MOS FET can be driven on a low voltage and 0.1+0.1 0.05 because it is not necessary to consider the drive current, the 2SJ243 is ideal for driving the actuator of power-saving sy

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2SJ247 Silicon P Channel MOS FET REJ03G0854-0200 (Previous ADE-208-1188) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline RENESAS Package code PRSS0004AC-A

2SJ244 Silicon P Channel MOS FET REJ03G0853-0200 (Previous ADE-208-1187) Rev.2.00 Sep 07, 2005 Description High speed power switching Low voltage operation Features Very Low on-resistance High speed switching Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc. Outline RENESAS Package code PLZZ0004CA-A R (Package name

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SJ245 L , 2SJ245 S SILICON P-CHANNEL MOS FET Application DPAK 1 4 High speed power switching 4 Features 1 2 3 1 2 3 Low on resistance High speed switching 2, 4 Low drive current 4 V Gate drive device can be driven 1 from 5 V source 1. Gate Suitable for Switching regulator, DC DC 2. Drain converter 3. Source 3 4. Drain Table 1 Absolute M

www.DataSheet4U.com 2SJ245 L , 2SJ245 S SILICON P-CHANNEL MOS FET Application DPAK 1 4 High speed power switching 4 Features 1 2 3 1 2 3 Low on resistance High speed switching 2, 4 Low drive current 4 V Gate drive device can be driven 1 from 5 V source 1. Gate Suitable for Switching regulator, DC DC 2. Drain converter 3. Source 3 4. Drai

2SJ246 L , 2SJ246 S SILICON P-CHANNEL MOS FET Application DPAK 1 High speed power switching 4 4 Features 1 2 3 1 2 3 Low on resistance High speed switching 2, 4 Low drive current 4V gate drive device can be driven from 1 5V source. 1. Gate Suitable for Switching regulator, DC DC 2. Drain 3. Source converter 3 4. Drain Table 1 Absolute Maximu

SMD Type MOSFET P-Channel MOSFET 2SJ244 1.70 0.1 Features VDS (V) =-12V D ID =-2 A 0.42 0.1 0.46 0.1 RDS(ON) 0.8 (VGS =-4V) G RDS(ON) 0.9 (VGS =-2.5V) 1.Gate 2.Drain 3.Source S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -12 V Gate-Source Voltage VGS 7 Continuous Drain Current ID -2

2SJ244 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.050 at VGS = - 10 V - 7.6 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.056 at VGS = - 4.5 V - 6.0 APPLICATIONS Load Switch Battery Switch D S G G D S D P-Channel MOSFET ABSOL