2SJ248 Datasheet and Replacement

2SJ248 Silicon P Channel MOS FET REJ03G0855-0200 (Previous: ADE-208-1189) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0003AD-A

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ243P-CHANNEL MOS FETFOR SWITCHINGThe 2SJ243 is a P-channel vertical type MOS FET that is drivenPACKAGE DIMENSIONS (in mm)at 2.5 V.0.3 0.05Because this MOS FET can be driven on a low voltage and0.1+0.10.05because it is not necessary to consider the drive current, the2SJ243 is ideal for driving the actuator of power-saving sy

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2SJ247 Silicon P Channel MOS FET REJ03G0854-0200 (Previous: ADE-208-1188) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004AC-A

2SJ244 Silicon P Channel MOS FET REJ03G0853-0200 (Previous: ADE-208-1187) Rev.2.00 Sep 07, 2005 Description High speed power switching Low voltage operation Features Very Low on-resistance High speed switching Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc. Outline RENESAS Package code: PLZZ0004CA-AR(Package name:

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SJ245 L , 2SJ245 SSILICON P-CHANNEL MOS FETApplicationDPAK14High speed power switching4Features123123 Low onresistance High speed switching2, 4 Low drive current 4 V Gate drive device can be driven1from 5 V source1. Gate Suitable for Switching regulator, DC DC 2. Drainconverter3. Source34. DrainTable 1 Absolute M

www.DataSheet4U.com2SJ245 L , 2SJ245 SSILICON P-CHANNEL MOS FETApplicationDPAK14High speed power switching4Features123123 Low onresistance High speed switching2, 4 Low drive current 4 V Gate drive device can be driven1from 5 V source1. Gate Suitable for Switching regulator, DC DC 2. Drainconverter3. Source34. Drai

2SJ246 L , 2SJ246 SSILICON P-CHANNEL MOS FETApplicationDPAK1High speed power switching 44Features123123 Low onresistance High speed switching2, 4 Low drive current 4V gate drive device can be driven from15V source.1. Gate Suitable for Switching regulator, DC DC 2. Drain3. Sourceconverter34. DrainTable 1 Absolute Maximu

SMD Type MOSFETP-Channel MOSFET2SJ2441.70 0.1 Features VDS (V) =-12VD ID =-2 A0.42 0.10.46 0.1 RDS(ON) 0.8 (VGS =-4V)G RDS(ON) 0.9 (VGS =-2.5V)1.Gate2.Drain3.SourceS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -12V Gate-Source Voltage VGS 7 Continuous Drain Current ID -2

2SJ244www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.050 at VGS = - 10 V - 7.6 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.056 at VGS = - 4.5 V - 6.0APPLICATIONS Load Switch Battery SwitchDS G G D SD P-Channel MOSFET ABSOL