BUK9614-55 Todos los transistores

 

BUK9614-55 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK9614-55

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 142 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Id|ⓘ - Corriente continua de drenaje: 25 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm

Encapsulados: SOT404

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BUK9614-55 datasheet

 ..1. Size:56K  philips
buk9614-55 1.pdf pdf_icon

BUK9614-55

Philips Semiconductors Product specification TrenchMOS transistor BUK9614-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technology ID Drain current (DC) 68 A the device fea

 0.1. Size:322K  philips
buk9514-55a buk9614-55a.pdf pdf_icon

BUK9614-55

BUK9514-55A; BUK9614-55A TrenchMOS logic level FET Rev. 01 7 Feb 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9514-55A in SOT78 (TO-220AB) BUK9614-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS technology

 0.2. Size:769K  nxp
buk9614-55a.pdf pdf_icon

BUK9614-55

BUK9614-55A N-channel TrenchMOS logic level FET Rev. 02 7 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Featu

 6.1. Size:50K  philips
buk9614-30 1.pdf pdf_icon

BUK9614-55

Philips Semiconductors Product specification TrenchMOS transistor BUK9614-30 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 30 V mounting using trench technology. ID Drain current (DC) 69 A Thedevice feat

Otros transistores... BUK9520-55 , BUK9524-55 , BUK9528-55 , BUK9535-55 , BUK9606-30 , BUK9608-55 , BUK9610-30 , BUK9614-30 , IRFZ48N , BUK9618-30 , BUK9618-55 , BUK9620-55 , BUK9624-55 , BUK9628-55 , BUK9635-55 , BUK9675-55 , BUK9775-55 .

History: NCEP60T18

 

 

 


 
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