BUK9614-55
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK9614-55
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 142
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 25
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014
Ohm
Package:
SOT404
BUK9614-55
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK9614-55
Datasheet (PDF)
..1. Size:56K philips
buk9614-55 1.pdf 
Philips Semiconductors Product specification TrenchMOS transistor BUK9614-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. Using trench technology ID Drain current (DC) 68 Athe device fea
0.1. Size:322K philips
buk9514-55a buk9614-55a.pdf
BUK9514-55A; BUK9614-55ATrenchMOS logic level FETRev. 01 7 Feb 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9514-55A in SOT78 (TO-220AB)BUK9614-55A in SOT404 (D 2-PAK).2. Features TrenchMOS technology
0.2. Size:769K nxp
buk9614-55a.pdf
BUK9614-55AN-channel TrenchMOS logic level FETRev. 02 7 February 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Featu
6.1. Size:50K philips
buk9614-30 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9614-30 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 30 Vmounting using trench technology. ID Drain current (DC) 69 AThedevice feat
6.2. Size:206K nxp
buk9614-60e.pdf
BUK9614-60EN-channel TrenchMOS logic level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive aval
Datasheet: BUK9520-55
, BUK9524-55
, BUK9528-55
, BUK9535-55
, BUK9606-30
, BUK9608-55
, BUK9610-30
, BUK9614-30
, IRF730
, BUK9618-30
, BUK9618-55
, BUK9620-55
, BUK9624-55
, BUK9628-55
, BUK9635-55
, BUK9675-55
, BUK9775-55
.
