2SK2329-01STL-E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK2329-01STL-E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 20 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
Paquete / Cubierta: DPAK

Búsqueda de reemplazo de MOSFET 2SK2329-01STL-E

2SK2329-01STL-E Datasheet (PDF)

7.1. Size:89K renesas
2sk2329.pdf

2SK2329(L), 2SK2329(S) Silicon N Channel MOS FET REJ03G1008-0200 (Previous: ADE-208-1356) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Suitable for Switching regulator, DC-DC converter Outline RENESAS Package co

7.2. Size:102K renesas
rej03g1008 2sk2329lsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

7.3. Size:32K hitachi
2sk2329s-l.pdf

2SK2329 L , 2SK2329 SSilicon N Channel MOS FETApplicationDPAK-2High speed power switching44Features123 Low onresistance High speed switching 2, 412 Low drive current3 2.5 V gate drive device can be driven from13 V source1. Gate Suitable for Switching regulator, DC DC 2. Drainconverter3. Source4. Drain3Table 1 Absolute Maxim

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