2SK2329-01STL-E Specs and Replacement
Type Designator: 2SK2329-01STL-E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: DPAK
2SK2329-01STL-E substitution
- MOSFET ⓘ Cross-Reference Search
2SK2329-01STL-E datasheet
2sk2329.pdf
2SK2329(L), 2SK2329(S) Silicon N Channel MOS FET REJ03G1008-0200 (Previous ADE-208-1356) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Suitable for Switching regulator, DC-DC converter Outline RENESAS Package co... See More ⇒
rej03g1008 2sk2329lsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
2sk2329s-l.pdf
2SK2329 L , 2SK2329 S Silicon N Channel MOS FET Application DPAK-2 High speed power switching 4 4 Features 12 3 Low on resistance High speed switching 2, 4 12 Low drive current 3 2.5 V gate drive device can be driven from 1 3 V source 1. Gate Suitable for Switching regulator, DC DC 2. Drain converter 3. Source 4. Drain 3 Table 1 Absolute Maxim... See More ⇒
Detailed specifications: 2SK1838L, 2SK1838S, 2SK1859, 2SK1933, 2SK2084L, 2SK2084STL-E, 2SK2202, 2SK2225, 2SK3878, 2SK2329L, 2SK2393, 2SK2408, 2SK2553L, 2SK2553S, 2SK2684L, 2SK2684S, 2SK2735L
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