2SK2329-01STL-E MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK2329-01STL-E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: DPAK
2SK2329-01STL-E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK2329-01STL-E Datasheet (PDF)
2sk2329.pdf
2SK2329(L), 2SK2329(S) Silicon N Channel MOS FET REJ03G1008-0200 (Previous: ADE-208-1356) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Suitable for Switching regulator, DC-DC converter Outline RENESAS Package co
rej03g1008 2sk2329lsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk2329s-l.pdf
2SK2329 L , 2SK2329 SSilicon N Channel MOS FETApplicationDPAK-2High speed power switching44Features123 Low onresistance High speed switching 2, 412 Low drive current3 2.5 V gate drive device can be driven from13 V source1. Gate Suitable for Switching regulator, DC DC 2. Drainconverter3. Source4. Drain3Table 1 Absolute Maxim
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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