2SK3070L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK3070L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 130 nC
   trⓘ - Tiempo de subida: 300 nS
   Cossⓘ - Capacitancia de salida: 1300 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0058 Ohm
   Paquete / Cubierta: LDPAK

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2SK3070L Datasheet (PDF)

..1. Size:282K inchange semiconductor
2sk3070l.pdf

isc N-Channel MOSFET Transistor 2SK3070LFEATURESDrain Current : I = 75A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 5.8m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

0.1. Size:108K renesas
rej03g1063 2sk3070lsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

7.1. Size:94K renesas
2sk3070.pdf

2SK3070(L), 2SK3070(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1063-0900 (Previous: ADE-208-684G) Rev.9.00 Sep 07, 2005 Features Low on-resistance RDS(on) =4.5 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(

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2sk3070s.pdf

isc N-Channel MOSFET Transistor 2SK3070SFEATURESDrain Current : I = 75A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 5.8m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

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