2SK3141-01 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK3141-01
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 100 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 370 nS
Cossⓘ - Capacitancia de salida: 1550 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
Encapsulados: TO220AB
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2SK3141-01 datasheet
2sk3141.pdf
2SK3141 Silicon N Channel MOS FET High Speed Power Switching REJ03G1070-0400 (Previous ADE-208-680B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 4 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D 1. Gate 2. Drain (Flange) G 3. Source
rej03g1070 2sk3141ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk3141.pdf
isc N-Channel MOSFET Transistor 2SK3141 FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage V =30V(Min) DSS Static Drain-Source On-Resistance R =5 m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr
Otros transistores... 2SK3070L, 2SK3070S, 2SK3082L, 2SK3082STL, 2SK3134L, 2SK3134S, 2SK3135L, 2SK3135S, RFP50N06, 2SK3147L, 2SK3147S, 2SK3150L, 2SK3150S, 2SK3161L, 2SK3161S, 2SK3210L, 2SK3210S
History: SWF4N65K | SWF8N70K
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