All MOSFET. 2SK3141-01 Datasheet

 

2SK3141-01 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK3141-01

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 100 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Drain Current |Id|: 75 A

Maximum Drain-Source On-State Resistance (Rds): 0.004 Ohm

Package: TO220AB

2SK3141-01 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3141-01 Datasheet (PDF)

7.1. 2sk3141.pdf Size:87K _renesas

2SK3141-01
2SK3141-01

2SK3141 Silicon N Channel MOS FET High Speed Power Switching REJ03G1070-0400 (Previous: ADE-208-680B) Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 1. Gate 2. Drain (Flange) G 3. Source

7.2. rej03g1070 2sk3141ds.pdf Size:101K _renesas

2SK3141-01
2SK3141-01

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. rej03g1072 2sk3147lsds.pdf Size:233K _renesas

2SK3141-01
2SK3141-01

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.2. 2sk3148.pdf Size:88K _renesas

2SK3141-01
2SK3141-01

2SK3148 Silicon N Channel MOS FET High Speed Power Switching REJ03G1073-0200 (Previous: ADE-208-748) Rev.2.00 Sep 07, 2005 Features • Low on-resistance RDS =45 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1. Gate 2. Drain 3. Source 1 S 2 3

 8.3. rej03g1073 2sk3148ds.pdf Size:102K _renesas

2SK3141-01
2SK3141-01

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.4. 2sk3147.pdf Size:94K _renesas

2SK3141-01
2SK3141-01

2SK3147(L), 2SK3147(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1072-0200 (Previous: ADE-208-731) Rev.2.00 Sep 07, 2005 Features • Low on-resistance RDS =0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(L)-(

 8.5. rej03g1074 2sk3149ds.pdf Size:102K _renesas

2SK3141-01
2SK3141-01

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.6. 2sk3140.pdf Size:86K _renesas

2SK3141-01
2SK3141-01

2SK3140 Silicon N Channel MOS FET High Speed Power Switching REJ03G1069-0500 (Previous: ADE-208-767C) Rev.5.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AE-A (Package name: TO-220C•FM) D 1. Gate 2. Drain G 3. Source 1 2

8.7. 2sk3149.pdf Size:87K _renesas

2SK3141-01
2SK3141-01

2SK3149 Silicon N Channel MOS FET High Speed Power Switching REJ03G1074-0400 (Previous: ADE-208-767C) Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS =45 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 1. Gate G 2. Drain (Flange) 3. Source 1

8.8. 2sk3142.pdf Size:49K _hitachi

2SK3141-01
2SK3141-01

2SK3142 Silicon N Channel MOS FET High Speed Power Switching ADE-208-681A (Z) 2nd. Edition Feb. 1999 Features • Low on-resistance RDS(on) =4mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source Outline TO–220CFM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK3142 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to sour

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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