2SK3161L Todos los transistores

 ..1. Size:282K  inchange semiconductor
 2sk3161l.pdf

isc N-Channel MOSFET Transistor 2SK3161L FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 115m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 0.1. Size:108K  renesas
 rej03g1086 2sk3161lsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 7.1. Size:94K  renesas
 2sk3161.pdf

2SK3161(L), 2SK3161(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1086-0300 (Previous ADE-208-734A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS =90 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name LDPAK(L)

 7.2. Size:356K  inchange semiconductor
 2sk3161s.pdf

isc N-Channel MOSFET Transistor 2SK3161S FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 115m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid