2SK3161L MOSFET PDF: N-Ch, 200V, 15A. Datasheet. Full specification with pinout and replacement list

2SK3161L Specs and Replacement

   Type Designator: 2SK3161L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 510 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm
   Package: LDPAK

2SK3161L substitution

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2SK3161L datasheet

..1. Size:282K inchange semiconductor
2sk3161l.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3161L FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 115m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒

0.1. Size:108K renesas
rej03g1086 2sk3161lsds.pdf pdf_icon

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

7.1. Size:94K renesas
2sk3161.pdf pdf_icon

2SK3161(L), 2SK3161(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1086-0300 (Previous ADE-208-734A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS =90 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name LDPAK(L)... See More ⇒

7.2. Size:356K inchange semiconductor
2sk3161s.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3161S FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 115m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒

Detailed specifications: 2SK3134S , 2SK3135L , 2SK3135S , 2SK3141-01 , 2SK3147L , 2SK3147S , 2SK3150L , 2SK3150S , IRF520 , 2SK3161S , 2SK3210L , 2SK3210S , 2SK3211L , 2SK3211S , 2SK3274L , 2SK3274S , 2SK3418 .