2SK3161L PDF and Equivalents Search

 

2SK3161L Specs and Replacement

Type Designator: 2SK3161L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

Cossⓘ - Output Capacitance: 510 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm

Package: LDPAK

2SK3161L substitution

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2SK3161L datasheet

 ..1. Size:282K  inchange semiconductor
2sk3161l.pdf pdf_icon

2SK3161L

isc N-Channel MOSFET Transistor 2SK3161L FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 115m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒

 0.1. Size:108K  renesas
rej03g1086 2sk3161lsds.pdf pdf_icon

2SK3161L

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 7.1. Size:94K  renesas
2sk3161.pdf pdf_icon

2SK3161L

2SK3161(L), 2SK3161(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1086-0300 (Previous ADE-208-734A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS =90 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name LDPAK(L)... See More ⇒

 7.2. Size:356K  inchange semiconductor
2sk3161s.pdf pdf_icon

2SK3161L

isc N-Channel MOSFET Transistor 2SK3161S FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 115m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒

Detailed specifications: 2SK3134S , 2SK3135L , 2SK3135S , 2SK3141-01 , 2SK3147L , 2SK3147S , 2SK3150L , 2SK3150S , IRF520 , 2SK3161S , 2SK3210L , 2SK3210S , 2SK3211L , 2SK3211S , 2SK3274L , 2SK3274S , 2SK3418 .

Keywords - 2SK3161L MOSFET specs

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