2SK3211L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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2SK3211L Datasheet (PDF)

1.1. rej03g1091 2sk3211lsds.pdf Size:108K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

3.1. 2sk3211.pdf Size:94K _renesas

2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1091-0400 Rev.4.00 May 15, 2006 Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(L)) (Package name: LDPAK(S)-

 4.1. r07ds0409ej 2sk3210ls.pdf Size:164K _renesas

 Preliminary Datasheet 2SK3210(L), 2SK3210(S) R07DS0409EJ0400 (Previous: REJ03G0414-0300) Silicon N Channel MOS FET Rev.4.00 High Speed Power Switching May 16, 2011 Features • Low on-resistance RDS = 40 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B

4.2. 2sk3210.pdf Size:157K _renesas

2SK3210(L), 2SK3210(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G0414-0300 (Previous ADE-208-760A (Z)) Rev.3.00 Sep. 30, 2004 Features • Low on-resistance RDS = 40 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline LDPAK D 4 4 1. Gate 2. Drain G 3. Source 4. Drain 1 2 3 1 2 3 S Absolute Maximum Rating

 4.3. rej03g1092 2sk3212ds.pdf Size:104K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.4. 2sk3212.pdf Size:94K _renesas

2SK3212 Silicon N Channel MOS FET High Speed Power Switching REJ03G1092-0300 (Previous: ADE-208-752A) Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS =0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1. Gate 2. Drain 3. Source 1 S 2 3

 4.5. 2sk321.pdf Size:205K _panasonic



4.6. 2sk3219-01mr.pdf Size:147K _fuji

FUJI POWER MOS-FET 2SK3219-01MR N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS (Uninterruptible Power Supply) DC-DC converters 3. Source Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=25

4.7. 2sk3214.pdf Size:28K _hitachi

2SK3214 Silicon N Channel MOS FET High Speed Power Switching ADE-208-763(Z) Target Specification 1st. Edition December 1998 Features • Low on-resistance RDS =130mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220AB D G 1. Gate 1 2. Drain(Flange) 2 3. Source 3 S 2SK3214 Absolute Maximum Ratings (Ta = 25° C) Item S

Liste

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