2SK3211L Datasheet. Specs and Replacement

Type Designator: 2SK3211L  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 230 nS

Cossⓘ - Output Capacitance: 790 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm

Package: LDPAK

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2SK3211L datasheet

 ..1. Size:283K  inchange semiconductor
 2sk3211l.pdf pdf_icon

2SK3211L

isc N-Channel MOSFET Transistor 2SK3211L FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 75m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒

 0.1. Size:108K  renesas
 rej03g1091 2sk3211lsds.pdf pdf_icon

2SK3211L

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 7.1. Size:94K  renesas
 2sk3211.pdf pdf_icon

2SK3211L

2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1091-0400 Rev.4.00 May 15, 2006 Features Low on-resistance RDS = 60 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name LDPAK(L)) (Package name LDPAK(S)-... See More ⇒

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2SK3211L

isc N-Channel MOSFET Transistor 2SK3211S FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 75m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒

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Detailed specifications: 2SK3147L, 2SK3147S, 2SK3150L, 2SK3150S, 2SK3161L, 2SK3161S, 2SK3210L, 2SK3210S, AO3407, 2SK3211S, 2SK3274L, 2SK3274S, 2SK3418, 2SK3419, 2SK3446, 2SK3447, 2SK3736

Keywords - 2SK3211L MOSFET specs

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