2SK3418 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK3418
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 110 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 85 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 320 nS
Cossⓘ - Capacitancia de salida: 1340 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
Encapsulados: TO220AB
Búsqueda de reemplazo de 2SK3418 MOSFET
- Selecciónⓘ de transistores por parámetros
2SK3418 datasheet
..1. Size:117K renesas
2sk3418.pdf 
2SK3418 Silicon N Channel MOS FET High Speed Power Switching REJ03G0407-0200 (Previous ADE-208-941 (Z)) Rev.2.00 Sep.10.2004 Features Low on-resistance RDS(on) = 4.3 m typ. Capable of 4 V gate drive High speed switching Outline TO-220AB D 1. Gate 2. Drain G (Flange) 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain t
..2. Size:130K renesas
rej03g0407 2sk3418.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.1. Size:250K toshiba
2sk3417.pdf
2SK3417 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3417 Switching Regulator Applications Unit mm Reverse-recovery time trr = 60 ns (typ.) Built-in high-speed flywheel diode Low drain-source ON resistance RDS (ON) = 1.6 (typ.) High forward transfer admittance Yfs = 4.0 S (typ.) Low leakage current IDSS = 100 A (m
8.2. Size:32K sanyo
2sk3414ls.pdf
Ordering number ENN7152 2SK3414LS N-Channel Silicon MOSFET 2SK3414LS DC / DC Converter Applications Features Package Dimensions Low ON-resistance. unit mm 4V drive. 2078C [2SK3414LS] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 2 3 1 Gate 2 Drain 3 Source Specifications 2.55 2.55 Absolute Maximum Ratings at Ta=25 C SANYO TO-220FI(LS) Parameter Symbol Condi
8.3. Size:31K sanyo
2sk3411.pdf
Ordering number ENN7175 2SK3411 N-Channel Silicon MOSFET 2SK3411 DC / DC Converter Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2083B 4V drive. [2SK3411] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 4 Drain 2.3 2.3 SANYO TP unit mm 2092B [2SK3411] 6.5 2.3 5.0 0.5
8.4. Size:32K sanyo
2sk3413ls.pdf
Ordering number ENN7151 2SK3413LS N-Channel Silicon MOSFET 2SK3413LS DC / DC Converter Applications Features Package Dimensions Low ON-resistance. unit mm 4V drive. 2078C [2SK3413LS] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 2 3 1 Gate 2 Drain 3 Source Specifications 2.55 2.55 Absolute Maximum Ratings at Ta=25 C SANYO TO-220FI(LS) Parameter Symbol Condi
8.5. Size:31K sanyo
2sk3412.pdf
Ordering number ENN7176 2SK3412 N-Channel Silicon MOSFET 2SK3412 DC / DC Converter Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2083B 4V drive. [2SK3412] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 4 Drain 2.3 2.3 SANYO TP unit mm 2092B [2SK3412] 6.5 2.3 5.0 0.5
8.6. Size:31K sanyo
2sk3415ls.pdf
Ordering number ENN7153 2SK3415LS N-Channel Silicon MOSFET 2SK3415LS DC / DC Converter, Motor Driver Applications Features Package Dimensions Low ON-resistance. unit mm 4V drive. 2078C [2SK3415LS] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 2 3 1 Gate 2 Drain 3 Source Specifications 2.55 2.55 Absolute Maximum Ratings at Ta=25 C SANYO TO-220FI(LS) Parameter
8.7. Size:135K renesas
rej03g1099 2sk3419ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.8. Size:121K renesas
2sk3419.pdf
2SK3419 Silicon N Channel MOS FET High Speed Power Switching REJ03G1099-0200 (Previous ADE-208-942) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS (on) = 4.3 m typ. 4 V gate drive device High speed switching Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate 2. Drain (Flange) G 3. Source 1 2 S 3 Rev.2.00 Sep 07,
8.9. Size:279K inchange semiconductor
2sk3414ls.pdf
isc N-Channel MOSFET Transistor 2SK3414LS FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 26m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno
8.10. Size:356K inchange semiconductor
2sk3417b.pdf
isc N-Channel MOSFET Transistor 2SK3417B FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.8 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen
8.11. Size:354K inchange semiconductor
2sk3412i.pdf
isc N-Channel MOSFET Transistor 2SK3412I FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 62m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi
8.12. Size:279K inchange semiconductor
2sk3413ls.pdf
isc N-Channel MOSFET Transistor 2SK3413LS FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 33m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno
8.13. Size:286K inchange semiconductor
2sk3412d.pdf
isc N-Channel MOSFET Transistor 2SK3412D FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 62m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi
8.14. Size:282K inchange semiconductor
2sk3417k.pdf
isc N-Channel MOSFET Transistor 2SK3417K FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.8 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen
8.15. Size:279K inchange semiconductor
2sk3415ls.pdf
isc N-Channel MOSFET Transistor 2SK3415LS FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 17m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno
Otros transistores... 2SK3161L, 2SK3161S, 2SK3210L, 2SK3210S, 2SK3211L, 2SK3211S, 2SK3274L, 2SK3274S, AO3400A, 2SK3419, 2SK3446, 2SK3447, 2SK3736, 2SK4093, 2SK4150, 2SK4151, H5N1503P
