All MOSFET. 2SK3418 Datasheet

 

2SK3418 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK3418

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 110 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Drain Current |Id|: 85 A

Total Gate Charge (Qg): 180 nC

Maximum Drain-Source On-State Resistance (Rds): 0.0043 Ohm

Package: TO220AB

2SK3418 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3418 Datasheet (PDF)

0.1. rej03g0407 2sk3418.pdf Size:130K _renesas

2SK3418
2SK3418

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

0.2. 2sk3418.pdf Size:117K _renesas

2SK3418
2SK3418

2SK3418 Silicon N Channel MOS FET High Speed Power Switching REJ03G0407-0200 (Previous ADE-208-941 (Z)) Rev.2.00 Sep.10.2004 Features • Low on-resistance RDS(on) = 4.3 mΩ typ. • Capable of 4 V gate drive • High speed switching Outline TO-220AB D 1. Gate 2. Drain G (Flange) 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain t

 8.1. 2sk3417.pdf Size:250K _toshiba

2SK3418
2SK3418

2SK3417 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3417 Switching Regulator Applications Unit: mm • Reverse-recovery time: trr = 60 ns (typ.) • Built-in high-speed flywheel diode • Low drain-source ON resistance: RDS (ON) = 1.6 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 μA (m

8.2. 2sk3414ls.pdf Size:32K _sanyo

2SK3418
2SK3418

Ordering number : ENN7152 2SK3414LS N-Channel Silicon MOSFET 2SK3414LS DC / DC Converter Applications Features Package Dimensions • Low ON-resistance. unit : mm • 4V drive. 2078C [2SK3414LS] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 2 3 1 : Gate 2 : Drain 3 : Source Specifications 2.55 2.55 Absolute Maximum Ratings at Ta=25°C SANYO : TO-220FI(LS) Parameter Symbol Condi

 8.3. 2sk3413ls.pdf Size:32K _sanyo

2SK3418
2SK3418

Ordering number : ENN7151 2SK3413LS N-Channel Silicon MOSFET 2SK3413LS DC / DC Converter Applications Features Package Dimensions • Low ON-resistance. unit : mm • 4V drive. 2078C [2SK3413LS] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 2 3 1 : Gate 2 : Drain 3 : Source Specifications 2.55 2.55 Absolute Maximum Ratings at Ta=25°C SANYO : TO-220FI(LS) Parameter Symbol Condi

8.4. 2sk3412.pdf Size:31K _sanyo

2SK3418
2SK3418

Ordering number : ENN7176 2SK3412 N-Channel Silicon MOSFET 2SK3412 DC / DC Converter Applications Features Package Dimensions • Low ON-resistance. unit : mm • Ultrahigh-speed switching. 2083B • 4V drive. [2SK3412] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 1 2 3 2 : Drain 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit : mm 2092B [2SK3412] 6.5 2.3 5.0 0.5

 8.5. 2sk3415ls.pdf Size:31K _sanyo

2SK3418
2SK3418

Ordering number : ENN7153 2SK3415LS N-Channel Silicon MOSFET 2SK3415LS DC / DC Converter, Motor Driver Applications Features Package Dimensions • Low ON-resistance. unit : mm • 4V drive. 2078C [2SK3415LS] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 2 3 1 : Gate 2 : Drain 3 : Source Specifications 2.55 2.55 Absolute Maximum Ratings at Ta=25°C SANYO : TO-220FI(LS) Parameter

8.6. 2sk3411.pdf Size:31K _sanyo

2SK3418
2SK3418

Ordering number : ENN7175 2SK3411 N-Channel Silicon MOSFET 2SK3411 DC / DC Converter Applications Features Package Dimensions • Low ON-resistance. unit : mm • Ultrahigh-speed switching. 2083B • 4V drive. [2SK3411] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 1 2 3 2 : Drain 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit : mm 2092B [2SK3411] 6.5 2.3 5.0 0.5

8.7. rej03g1099 2sk3419ds.pdf Size:135K _renesas

2SK3418
2SK3418

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.8. 2sk3419.pdf Size:121K _renesas

2SK3418
2SK3418

2SK3419 Silicon N Channel MOS FET High Speed Power Switching REJ03G1099-0200 (Previous: ADE-208-942) Rev.2.00 Sep 07, 2005 Features • Low on-resistance RDS (on) = 4.3 mΩ typ. • 4 V gate drive device • High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate 2. Drain (Flange) G 3. Source 1 2 S 3 Rev.2.00 Sep 07,

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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