2SK4150 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK4150
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.75 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 0.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 14 nS
Cossⓘ - Capacitancia de salida: 11.4 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5.7 Ohm
Paquete / Cubierta: TO92
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2SK4150 Datasheet (PDF)
rej03g1909 2sk4150ds.pdf
Preliminary Datasheet 2SK4150 REJ03G1909-0300Silicon N Channel MOS FET Rev.3.00High Speed Power Switching May 27, 2010Features Capable of 2.5 V gate drive Low drive current Low on-resistance RDS(on) = 4.0 typ. (at ID = 0.2 A, VGS = 4 V, Ta = 25C) Outline RENESAS Package code: PRSS0003DA-A(Package name: TO-92(1))D1. Source2. DrainG3. Gate
rej03g1901 2sk4151ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk415.pdf
isc N-Channel MOSFET Transistor 2SK415DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V = 800V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage,high speed power Switching .ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918