Preliminary Datasheet 2SK4150 REJ03G1909-0300Silicon N Channel MOS FET Rev.3.00High Speed Power Switching May 27, 2010Features Capable of 2.5 V gate drive Low drive current Low on-resistance RDS(on) = 4.0 typ. (at ID = 0.2 A, VGS = 4 V, Ta = 25C) Outline RENESAS Package code: PRSS0003DA-A(Package name: TO-92(1))D1. Source2. DrainG3. Gate

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

isc N-Channel MOSFET Transistor 2SK415DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V = 800V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage,high speed power Switching .ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE