H5N2008P Todos los transistores

 

H5N2008P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: H5N2008P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 150 W

Tensión drenaje-fuente (Vds): 200 V

Corriente continua de drenaje (Id): 96 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 98 nC

Resistencia drenaje-fuente RDS(on): 0.02 Ohm

Empaquetado / Estuche: TO3P

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H5N2008P Datasheet (PDF)

1.1. rej03g0390 h5n2008p.pdf Size:130K _renesas

H5N2008P
H5N2008P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.1. rej03g0235 h5n2003p.pdf Size:99K _renesas

H5N2008P
H5N2008P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.2. rej03g1104 h5n2005dldsds.pdf Size:122K _renesas

H5N2008P
H5N2008P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

 4.3. rej03g1103 h5n2004dldsds.pdf Size:104K _renesas

H5N2008P
H5N2008P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.4. rej03g1339 h5n2001ldlslmds.pdf Size:114K _renesas

H5N2008P
H5N2008P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

Otros transistores... 2SK4151 , H5N1503P , H5N1506P , H5N2003P , H5N2004DL , H5N2004DS , H5N2005DL , H5N2005DS , IRF630A , H5N2301PF , H5N2305P , H5N2305PF , H5N2306PF , H5N2504DL , H5N2504DS , H5N2505DL , H5N2505DS .

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