H5N2008P Specs and Replacement
Type Designator: H5N2008P
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 96 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 370 nS
Cossⓘ - Output Capacitance: 850 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: TO3P
H5N2008P substitution
- MOSFET ⓘ Cross-Reference Search
H5N2008P datasheet
rej03g0390 h5n2008p.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
rej03g1339 h5n2001ldlslmds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
h5n2001lm.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
rej03g0235 h5n2003p.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
Detailed specifications: 2SK4151, H5N1503P, H5N1506P, H5N2003P, H5N2004DL, H5N2004DS, H5N2005DL, H5N2005DS, MMIS60R580P, H5N2301PF, H5N2305P, H5N2305PF, H5N2306PF, H5N2504DL, H5N2504DS, H5N2505DL, H5N2505DS
Keywords - H5N2008P MOSFET specs
H5N2008P cross reference
H5N2008P equivalent finder
H5N2008P pdf lookup
H5N2008P substitution
H5N2008P replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: WMO80R720S | AM4890N | IRF6638PBF | SPP22N05 | SM4365NAKP | RJK0331DPB-01 | CMPDM8002A
🌐 : EN ES РУ
LIST
Last Update
MOSFET: FTF30P35D | FTF25N35DHVT | FTF15N35D | FTE15C35G | FTP02P15G | FTE02P15G | AKF30N5P0SX | AKF30N10S | AKF20P45D | CM4407
Popular searches
2sc2412 | 2sc372 | 2sd400 datasheet | k2645 | tip3055 equivalent | 3sk73 | 13n10 mosfet | 2n3565 transistor
