2N6657 Todos los transistores

 

2N6657 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N6657
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 25 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 15 V
   Corriente continua de drenaje |Id|: 2 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tiempo de subida (tr): 5 nS
   Conductancia de drenaje-sustrato (Cd): 50 pF
   Resistencia entre drenaje y fuente RDS(on): 3 Ohm
   Paquete / Cubierta: TO3

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2N6657 Datasheet (PDF)

 9.1. Size:89K  vishay
2n6659-2.pdf

2N6657
2N6657

2N6659, 2N6659-2www.vishay.comVishay SiliconixN-Channel 35 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Military QualifiedVDS (V) 35 Low On-Resistence: 1.3 RDS(on) () at VGS = 10 V 1.8 Low Threshold: 1.7 VConfiguration Single Low Input Capacitance: 35 pF Fast Switching Speed: 8 ns Low Input and Output LeakageTO-205ADBENEFITS(TO-39) Guarant

 9.2. Size:146K  mospec
2n6383-85 2n6648-49 2n6650.pdf

2N6657
2N6657

AAA

 9.3. Size:42K  no
2n6656-59 2n6660-61.pdf

2N6657

 9.4. Size:11K  semelab
2n6653.pdf

2N6657

2N6653Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 300V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 9.5. Size:12K  semelab
2n6654.pdf

2N6657

2N6654Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 350V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 9.6. Size:71K  semelab
2n6659x.pdf

2N6657
2N6657

N-CHANNEL ENHANCEMENT MODE MOSFET 2N6659X Switching Regulators Converters Motor Drives ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VDS Drain Source Voltage 35V VGS Gate Source Voltage 20V ID TC = 25C Drain Current 1.4A ID TC = 100C Drain Current 1.0A IDM1 Pulsed Drain Current 3A PD TC = 25C Power Dissipation 6.25W

 9.7. Size:11K  semelab
2n6655.pdf

2N6657

2N6655Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 400V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 9.8. Size:18K  semelab
2n6659.pdf

2N6657
2N6657

2N6659MECHANICAL DATADimensions in mm (inches)NCHANNEL8.89 (0.35)ENHANCEMENT MODE9.40 (0.37)7.75 (0.305)8.51 (0.335)MOS TRANSISTOR4.19 (0.165)4.95 (0.195)0.89max.FEATURES(0.035)12.70(0.500)7.75 (0.305)min.8.51 (0.335) Switching Regulatorsdia. Converters5.08 (0.200)typ. Motor Drivers2.542(0.100)1 30.66 (0.026)1.14 (0.045

 9.9. Size:147K  jmnic
2n6653.pdf

2N6657
2N6657

JMnic Product Specification Silicon NPN Power Transistors 2N6653 DESCRIPTION With TO-3 package High voltage capability Fast switching speeds Low saturation voltage APPLICATIONS Switcing regulators Inverters Solenoid and relay drivers Deflection circuits PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol

 9.10. Size:147K  jmnic
2n6654.pdf

2N6657
2N6657

JMnic Product Specification Silicon NPN Power Transistors 2N6654 DESCRIPTION With TO-3 package High voltage capability Fast switching speeds Low saturation voltage APPLICATIONS Switcing regulators Inverters Solenoid and relay drivers Deflection circuits PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol

 9.11. Size:186K  inchange semiconductor
2n6653.pdf

2N6657
2N6657

isc Silicon NPN Power Transistor 2N6653DESCRIPTIONHigh Voltage CapabilityHigh Current Current CapabilityLow Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesinged for use in switching and linear applications inmilitary and power conversion.Absolute maximum ratings(Ta

 9.12. Size:186K  inchange semiconductor
2n6654.pdf

2N6657
2N6657

isc Silicon NPN Power Transistor 2N6654DESCRIPTIONHigh Voltage CapabilityHigh Current Current CapabilityLow Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesinged for use in switching and linear applications inmilitary and power conversion.Absolute maximum ratings(Ta

Otros transistores... 2N4393 , 2N4393CSM , 2N4416 , 2N5045 , 2N5484 , 2N5485 , 2N5486 , 2N6656 , 10N60 , 2N6658 , 2N6659 , 2N6659-LCC4 , 2N6659-SM , 2N6660 , 2N6660JAN , 2N6660JANTX , 2N6660JANTXV .

 

 
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