H5N2515P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: H5N2515P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 200 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 55 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 240 nS
Cossⓘ - Capacitancia de salida: 530 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.044 Ohm
Encapsulados: TO3P
Búsqueda de reemplazo de H5N2515P MOSFET
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H5N2515P datasheet
rej03g0413 h5n2515p.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g0478 h5n2519p.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1203 h5n2514p.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
h5n2512fl-m0.pdf
Preliminary Datasheet H5N2512FL-M0 R07DS0997EJ0100 250V - 18A - MOS FET Rev.1.00 High Speed Power Switching Jan 08, 2013 Features Low on-resistance RDS(on) = 0.082 typ. (at ID = 9 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL) D
Otros transistores... H5N2507P, H5N2508DL, H5N2508DS, H5N2509P, H5N2509PF, H5N2510DL, H5N2510DS, H5N2514P, IRF640, H5N2519P, H5N2522LS, H5N2801P, H5N2802PF, H5N2803PF, H5N3003P, H5N3004P, H5N3005LD
History: PHD97NQ03LT
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