H5N2515P PDF and Equivalents Search

 

H5N2515P Specs and Replacement

Type Designator: H5N2515P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 240 nS

Cossⓘ - Output Capacitance: 530 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm

Package: TO3P

H5N2515P substitution

- MOSFET ⓘ Cross-Reference Search

 

H5N2515P datasheet

 ..1. Size:93K  renesas
 rej03g0413 h5n2515p.pdf pdf_icon

H5N2515P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.1. Size:114K  renesas
 rej03g0478 h5n2519p.pdf pdf_icon

H5N2515P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.2. Size:65K  renesas
 rej03g1203 h5n2514p.pdf pdf_icon

H5N2515P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.3. Size:92K  renesas
 h5n2512fl-m0.pdf pdf_icon

H5N2515P

Preliminary Datasheet H5N2512FL-M0 R07DS0997EJ0100 250V - 18A - MOS FET Rev.1.00 High Speed Power Switching Jan 08, 2013 Features Low on-resistance RDS(on) = 0.082 typ. (at ID = 9 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL) D ... See More ⇒

SHOW MORE

Detailed specifications: H5N2507P , H5N2508DL , H5N2508DS , H5N2509P , H5N2509PF , H5N2510DL , H5N2510DS , H5N2514P , IRF640 , H5N2519P , H5N2522LS , H5N2801P , H5N2802PF , H5N2803PF , H5N3003P , H5N3004P , H5N3005LD .

Keywords - H5N2515P MOSFET specs

 H5N2515P cross reference
 H5N2515P equivalent finder
 H5N2515P pdf lookup
 H5N2515P substitution
 H5N2515P replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 

 


 
↑ Back to Top
.