H5N2522LS Todos los transistores

 ..1. Size:84K  renesas
 r07ds0057ej h5n2522ls.pdf

Preliminary Datasheet H5N2522LS R07DS0057EJ0200 (Previous REJ03G1667-0100) Silicon N Channel MOS FET Rev.2.00 High Speed Power Switching Jul 23, 2010 Features Low on-resistance RDS(on) = 0.14 typ. (at ID = 10 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code PRSS0004AE-B

 7.1. Size:90K  renesas
 h5n2522fp-e0.pdf

Preliminary Datasheet H5N2522FP-E0-E R07DS0862EJ0100 250V - 12A - MOS FET Rev.1.00 High Speed Power Switching Jul 27, 2012 Features Low on-resistance RDS(on) = 0.13 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code PRSS0003AG-A (Package name TO-220FP) D 1

 9.1. Size:93K  renesas
 rej03g0413 h5n2515p.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.2. Size:114K  renesas
 rej03g0478 h5n2519p.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.3. Size:132K  renesas
 rej03g1107 h5n2505dldsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.4. Size:65K  renesas
 rej03g1203 h5n2514p.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.5. Size:104K  renesas
 rej03g1108 h5n2508dldsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.6. Size:100K  renesas
 rej03g1109 h5n2509pds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.7. Size:108K  renesas
 r07ds0399ej h5n2504dl.pdf

Preliminary Datasheet H5N2504DL, H5N2504DS R07DS0399EJ0300 (Previous REJ03G1106-0200) Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching May 16, 2011 Features Low on-resistance Low leakage current High speed switching Low gate charge Avalanche ratings Outline RENESAS Package code PRSS0004ZD-B RENESAS Package code PRSS0004ZD-C (Package

 9.8. Size:92K  renesas
 h5n2512fl-m0.pdf

Preliminary Datasheet H5N2512FL-M0 R07DS0997EJ0100 250V - 18A - MOS FET Rev.1.00 High Speed Power Switching Jan 08, 2013 Features Low on-resistance RDS(on) = 0.082 typ. (at ID = 9 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL) D

 9.9. Size:128K  renesas
 h5n2507p.pdf

Preliminary Datasheet H5N2507P R07DS0877EJ0200 (Previous RJJ03G0646-0100) 250V - 50A - MOS FET Rev.2.00 High Speed Power Switching Sep 12, 2012 Features Low on-resistance RDS(on) = 0.04 typ. (at ID = 25 A, VGS= 10 V, Ta = 25 C) Low leakage current High speed switching Low gate charge Built-in fast recovery diode Outline RENESAS Package code

 9.10. Size:101K  renesas
 rej03g1105 h5n2503pds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.11. Size:73K  renesas
 rej03g1110 h5n2510dldsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.