All MOSFET. H5N2522LS Datasheet

 

H5N2522LS MOSFET. Datasheet pdf. Equivalent

Type Designator: H5N2522LS

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 47 nC

Rise Time (tr): 41 nS

Drain-Source Capacitance (Cd): 185 pF

Maximum Drain-Source On-State Resistance (Rds): 0.18 Ohm

Package: LDPAK

H5N2522LS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

H5N2522LS Datasheet (PDF)

0.1. r07ds0057ej h5n2522ls.pdf Size:84K _renesas

H5N2522LS
H5N2522LS

 Preliminary Datasheet H5N2522LS R07DS0057EJ0200 (Previous: REJ03G1667-0100) Silicon N Channel MOS FET Rev.2.00 High Speed Power Switching Jul 23, 2010 Features  Low on-resistance RDS(on) = 0.14  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching  Built-in fast recovery diode Outline RENESAS Package code: PRSS0004AE-B

7.1. h5n2522fp-e0.pdf Size:90K _renesas

H5N2522LS
H5N2522LS

Preliminary Datasheet H5N2522FP-E0-E R07DS0862EJ0100 250V - 12A - MOS FET Rev.1.00 High Speed Power Switching Jul 27, 2012 Features  Low on-resistance RDS(on) = 0.13  typ. (at ID = 6 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching  Built-in fast recovery diode Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) D 1

 9.1. rej03g0413 h5n2515p.pdf Size:93K _renesas

H5N2522LS
H5N2522LS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.2. rej03g1203 h5n2514p.pdf Size:65K _renesas

H5N2522LS
H5N2522LS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.3. r07ds0399ej h5n2504dl.pdf Size:108K _renesas

H5N2522LS
H5N2522LS

 Preliminary Datasheet H5N2504DL, H5N2504DS R07DS0399EJ0300 (Previous: REJ03G1106-0200) Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching May 16, 2011 Features • Low on-resistance • Low leakage current • High speed switching • Low gate charge • Avalanche ratings Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS0004ZD-C (Package

9.4. rej03g1110 h5n2510dldsds.pdf Size:73K _renesas

H5N2522LS
H5N2522LS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.5. rej03g1107 h5n2505dldsds.pdf Size:132K _renesas

H5N2522LS
H5N2522LS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.6. rej03g1105 h5n2503pds.pdf Size:101K _renesas

H5N2522LS
H5N2522LS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.7. h5n2512fl-m0.pdf Size:92K _renesas

H5N2522LS
H5N2522LS

 Preliminary Datasheet H5N2512FL-M0 R07DS0997EJ0100 250V - 18A - MOS FET Rev.1.00 High Speed Power Switching Jan 08, 2013 Features  Low on-resistance RDS(on) = 0.082  typ. (at ID = 9 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching  Built-in fast recovery diode Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) D

9.8. rej03g0478 h5n2519p.pdf Size:114K _renesas

H5N2522LS
H5N2522LS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.9. rej03g1109 h5n2509pds.pdf Size:100K _renesas

H5N2522LS
H5N2522LS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.10. h5n2507p.pdf Size:128K _renesas

H5N2522LS
H5N2522LS

 Preliminary Datasheet H5N2507P R07DS0877EJ0200 (Previous: RJJ03G0646-0100) 250V - 50A - MOS FET Rev.2.00 High Speed Power Switching Sep 12, 2012 Features  Low on-resistance RDS(on) = 0.04  typ. (at ID = 25 A, VGS= 10 V, Ta = 25°C)  Low leakage current  High speed switching  Low gate charge  Built-in fast recovery diode Outline RENESAS Package code:

9.11. rej03g1108 h5n2508dldsds.pdf Size:104K _renesas

H5N2522LS
H5N2522LS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top