H7N1004DL Todos los transistores

 

H7N1004DL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: H7N1004DL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 30 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 25 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Carga de la puerta (Qg): 50 nC
   Tiempo de subida (tr): 110 nS
   Conductancia de drenaje-sustrato (Cd): 240 pF
   Resistencia entre drenaje y fuente RDS(on): 0.035 Ohm
   Paquete / Cubierta: DPAK

 Búsqueda de reemplazo de MOSFET H7N1004DL

 

H7N1004DL Datasheet (PDF)

 0.1. Size:131K  renesas
rej03g1482 h7n1004dldsds.pdf

H7N1004DL
H7N1004DL

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 7.1. Size:88K  renesas
r07ds0209ej h7n1004fm.pdf

H7N1004DL
H7N1004DL

Preliminary Datasheet H7N1004FM R07DS0209EJ0200(Previous: REJ03G0073-0100)Silicon N-Channel MOSFET Rev.2.00High-Speed Power Switching Dec 02, 2010Features Low on-resistance RDS(on) = 25 m typ. Low drive current Available for 4.5 V gate drive Outline RENESAS Package code: PRSS0003AD-A(Package name: TO-220FM )2D1. Gate1 G2. Drain3. Sou

 7.2. Size:120K  renesas
rej03g0072 h7n1004ldlslm.pdf

H7N1004DL
H7N1004DL

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 7.3. Size:123K  renesas
rej03g1579 h7n1004abds.pdf

H7N1004DL
H7N1004DL

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


H7N1004DL
  H7N1004DL
  H7N1004DL
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: MRF5035 | MRF5015 | MRF5007R1 | MRF5007 | MRF5003 | MRF275G | MRF184S | MRF184 | MRF177M | MRF177 | MRF176GV | MRF176GU | MRF175LV | MRF175LU | MRF175GV | MRF175GU

 

 

 
Back to Top