H7N1004DL MOSFET. Datasheet pdf. Equivalent

   Type Designator: H7N1004DL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 50 nC
   trⓘ - Rise Time: 110 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: DPAK

H7N1004DL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

H7N1004DL Datasheet (PDF)

0.1. Size:131K renesas
rej03g1482 h7n1004dldsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

7.1. Size:88K renesas
r07ds0209ej h7n1004fm.pdf

Preliminary Datasheet H7N1004FM R07DS0209EJ0200(Previous: REJ03G0073-0100)Silicon N-Channel MOSFET Rev.2.00High-Speed Power Switching Dec 02, 2010Features Low on-resistance RDS(on) = 25 m typ. Low drive current Available for 4.5 V gate drive Outline RENESAS Package code: PRSS0003AD-A(Package name: TO-220FM )2D1. Gate1 G2. Drain3. Sou

7.2. Size:120K renesas
rej03g0072 h7n1004ldlslm.pdf