All MOSFET. IRF151 Datasheet

 

IRF151 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF151

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Drain Current |Id|: 33 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 125 nC

Maximum Drain-Source On-State Resistance (Rds): 0.055 Ohm

Package: TO3

IRF151 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF151 Datasheet (PDF)

1.1. irf150 irf151 irf152 irf153.pdf Size:380K _st

IRF151
IRF151



5.1. irf1503lpbf irf1503spbf.pdf Size:330K _upd

IRF151
IRF151

PD - 95432A IRF1503SPbF IRF1503LPbF Typical Applications HEXFET® Power MOSFET Industrial Motor Drive D VDSS = 30V Benefits l Advanced Process Technology l Ultra Low On-Resistance RDS(on) = 3.3mΩ G l 175°C Operating Temperature l Fast Switching ID = 75A l Repetitive Avalanche Allowed up to Tjmax S Description This Stripe Planar design of HEXFET® Power MOSFETs utilizes th

5.2. irf150b irf150c.pdf Size:414K _upd

IRF151
IRF151

RoHS IRF150 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET 42A, 100Volts DESCRIPTION D The Nell IRF150 is a three-terminal silicon device with current conduction capability of 42A, fast switching speed, low on-state resistance, breakdown voltage rating of 100V, and max. threshold voltage of 4 volts. They are designed for use in applications such as G

 5.3. irf1503pbf.pdf Size:268K _upd

IRF151
IRF151

PD-95438A IRF1503PbF Typical Applications HEXFET® Power MOSFET Industrial Motor Drive D VDSS = 30V Features Advanced Process Technology Ultra Low On-Resistance RDS(on) = 3.3mΩ G 175°C Operating Temperature Fast Switching ID = 75A Repetitive Avalanche Allowed up to Tjmax S Description This design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to

5.4. irf150smd.pdf Size:22K _upd

IRF151
IRF151

IRF150SMD SEME LAB MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET VDSS 100V ID(cont) 19A RDS(on) 0.070 FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT – EFFICIENT USE OF PCB SPACE. • SIMPLE DRIVE REQUIREMENTS

 5.5. irf1503l irf1503s.pdf Size:661K _upd

IRF151
IRF151

PD - 94494A IRF1503S IRF1503L Typical Applications HEXFET® Power MOSFET ● 14V Automotive Electrical Systems D ● 14V Electronic Power Steering VDSS = 30V Benefits ● Advanced Process Technology RDS(on) = 3.3mΩ ● Ultra Low On-Resistance G ● 175°C Operating Temperature ● Fast Switching ID = 75A S ● Repetitive Avalanche Allowed up to Tjmax Description Specificall

5.6. irf1503lpbf irf1503spbf.pdf Size:330K _international_rectifier

IRF151
IRF151

PD - 95432A IRF1503SPbF IRF1503LPbF Typical Applications HEXFET® Power MOSFET Industrial Motor Drive D VDSS = 30V Benefits l Advanced Process Technology l Ultra Low On-Resistance RDS(on) = 3.3mΩ G l 175°C Operating Temperature l Fast Switching ID = 75A l Repetitive Avalanche Allowed up to Tjmax S Description This Stripe Planar design of HEXFET® Power MOSFETs utilizes th

5.7. irf1503pbf.pdf Size:268K _international_rectifier

IRF151
IRF151

PD-95438A IRF1503PbF Typical Applications HEXFET® Power MOSFET Industrial Motor Drive D VDSS = 30V Features Advanced Process Technology Ultra Low On-Resistance RDS(on) = 3.3mΩ G 175°C Operating Temperature Fast Switching ID = 75A Repetitive Avalanche Allowed up to Tjmax S Description This design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to

5.8. irf1530n.pdf Size:201K _international_rectifier

IRF151
IRF151

PD -9.1353 IRFI530N PRELIMINARY HEXFET® Power MOSFET Advanced Process Technology Isolated Package VDSS = 100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.11Ω Fully Avalanche Rated ID = 11A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resista

5.9. irf1503.pdf Size:552K _international_rectifier

IRF151
IRF151

PD-94526A AUTOMOTIVE MOSFET IRF1503 Typical Applications HEXFET® Power MOSFET ● 14V Automotive Electrical Systems D ● 14V Electronic Power Steering VDSS = 30V Features ● Advanced Process Technology RDS(on) = 3.3mΩ ● Ultra Low On-Resistance G ● 175°C Operating Temperature ● Fast Switching ID = 75A S ● Repetitive Avalanche Allowed up to Tjmax Description Speci

5.10. irf1520g.pdf Size:176K _international_rectifier

IRF151
IRF151



5.11. irf150.pdf Size:150K _international_rectifier

IRF151
IRF151

PD - 90337G REPETITIVE AVALANCHE AND dv/dt RATED IRF150 HEXFETTRANSISTORS JANTX2N6764 THRU-HOLE (TO-204AA/AE) JANTXV2N6764 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF150 100V 0.055Ω 38A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique proces

5.12. irf1503l irf1503s.pdf Size:661K _international_rectifier

IRF151
IRF151

PD - 94494A IRF1503S IRF1503L Typical Applications HEXFET® Power MOSFET ● 14V Automotive Electrical Systems D ● 14V Electronic Power Steering VDSS = 30V Benefits ● Advanced Process Technology RDS(on) = 3.3mΩ ● Ultra Low On-Resistance G ● 175°C Operating Temperature ● Fast Switching ID = 75A S ● Repetitive Avalanche Allowed up to Tjmax Description Specificall

5.13. irf150smd.pdf Size:22K _semelab

IRF151
IRF151

IRF150SMD SEME LAB MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET VDSS 100V ID(cont) 19A RDS(on) 0.070 FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT – EFFICIENT USE OF PCB SPACE. • SIMPLE DRIVE REQUIREMENTS

5.14. irf1503.pdf Size:245K _inchange_semiconductor

IRF151
IRF151

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1503, IIRF1503 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.3mΩ ·Enhancement mode: Vth =2.0 to 4.0V (VDS = 10 V, ID=250μA) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide v

5.15. irf1503s.pdf Size:203K _inchange_semiconductor

IRF151
IRF151

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1503S ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM

5.16. irf150.pdf Size:231K _inchange_semiconductor

IRF151
IRF151

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF150 DESCRIPTION ·Drain Current –I =40A@ T =25℃ D C ·Drain Source Voltage- : V = 100V(Min) DSS ·Static Drain-Source On-Resistance : R =0.055Ω(Max) DS(on) ·High Power,High Speed Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supplies

5.17. irf150b irf150c.pdf Size:414K _nell

IRF151
IRF151

RoHS IRF150 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET 42A, 100Volts DESCRIPTION D The Nell IRF150 is a three-terminal silicon device with current conduction capability of 42A, fast switching speed, low on-state resistance, breakdown voltage rating of 100V, and max. threshold voltage of 4 volts. They are designed for use in applications such as G

Datasheet: IRF1310NL , IRF1310NS , IRF140 , IRF1404 , IRF141 , IRF142 , IRF143 , IRF150 , IRFP4232 , IRF153 , IRF230 , IRF240 , IRF250 , IRF2807 , IRF2807L , IRF2807S , IRF3205 .

 

 
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