All MOSFET. IRF151 Datasheet

 

IRF151 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF151

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Drain Current |Id|: 33 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 125 nC

Maximum Drain-Source On-State Resistance (Rds): 0.055 Ohm

Package: TO3

IRF151 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF151 Datasheet (PDF)

0.1. irf150 irf151 irf152 irf153.pdf Size:380K _st

IRF151
IRF151

9.1. irf1503lpbf irf1503spbf.pdf Size:330K _international_rectifier

IRF151
IRF151

PD - 95432AIRF1503SPbFIRF1503LPbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveDVDSS = 30VBenefitsl Advanced Process Technologyl Ultra Low On-Resistance RDS(on) = 3.3mGl 175C Operating Temperaturel Fast SwitchingID = 75Al Repetitive Avalanche Allowed up to TjmaxSDescriptionThis Stripe Planar design of HEXFET Power MOSFETsutilizes th

9.2. irf1503pbf.pdf Size:268K _international_rectifier

IRF151
IRF151

PD-95438AIRF1503PbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveDVDSS = 30VFeatures Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 3.3mG 175C Operating Temperature Fast SwitchingID = 75A Repetitive Avalanche Allowed up to TjmaxSDescriptionThis design of HEXFET Power MOSFETs utilizesthe lastest processing techniques to

 9.3. irf1530n.pdf Size:201K _international_rectifier

IRF151
IRF151

PD -9.1353IRFI530NPRELIMINARYHEXFET Power MOSFET Advanced Process Technology Isolated PackageVDSS = 100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.11 Fully Avalanche RatedID = 11ADescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resista

9.4. irf1503.pdf Size:552K _international_rectifier

IRF151
IRF151

PD-94526AAUTOMOTIVE MOSFETIRF1503Typical ApplicationsHEXFET Power MOSFET 14V Automotive Electrical SystemsD 14V Electronic Power SteeringVDSS = 30VFeatures Advanced Process TechnologyRDS(on) = 3.3m Ultra Low On-ResistanceG 175C Operating Temperature Fast Switching ID = 75AS Repetitive Avalanche Allowed up to TjmaxDescriptionSpeci

 9.5. irf1520g.pdf Size:176K _international_rectifier

IRF151
IRF151

9.6. irf150.pdf Size:150K _international_rectifier

IRF151
IRF151

PD - 90337GREPETITIVE AVALANCHE AND dv/dt RATED IRF150HEXFETTRANSISTORS JANTX2N6764THRU-HOLE (TO-204AA/AE) JANTXV2N6764[REF:MIL-PRF-19500/543]100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF150 100V 0.055 38AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique proces

9.7. irf1503l irf1503s.pdf Size:661K _international_rectifier

IRF151
IRF151

PD - 94494AIRF1503SIRF1503LTypical ApplicationsHEXFET Power MOSFET 14V Automotive Electrical SystemsD 14V Electronic Power SteeringVDSS = 30VBenefits Advanced Process TechnologyRDS(on) = 3.3m Ultra Low On-ResistanceG 175C Operating Temperature Fast Switching ID = 75AS Repetitive Avalanche Allowed up to TjmaxDescriptionSpecificall

9.8. irf150p221.pdf Size:1109K _infineon

IRF151
IRF151

IRF150P221MOSFETPG-TO 247-3StrongIRFETFeatures Very low RDS(on) Excellent gate charge x R (FOM)DS(on) Optimized Qrr 175C operating temperature Product validation according to JEDEC standard Optimized for broadest availability from distribution partners 123Benefits Reduced conduction losses Ideal for high switching frequencyDrain

9.9. irf150p220.pdf Size:1140K _infineon

IRF151
IRF151

IRF150P220MOSFETPG-TO 247-3StrongIRFETFeatures Very low RDS(on) Excellent gate charge x R (FOM)DS(on) Optimized Qrr 175C operating temperature Product validation according to JEDEC standard Optimized for broadest availability from distribution partners 123Benefits Reduced conduction losses Ideal for high switching frequencyDrain

9.10. irf150smd.pdf Size:22K _semelab

IRF151
IRF151

IRF150SMDSEMELABMECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET VDSS 100V ID(cont) 19A RDS(on) 0.070FEATURES HERMETICALLY SEALED SURFACEMOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OFPCB SPACE. SIMPLE DRIVE REQUIREMENTS

9.11. irf150b irf150c.pdf Size:414K _nell

IRF151
IRF151

RoHS IRF150 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET42A, 100VoltsDESCRIPTIOND The Nell IRF150 is a three-terminal silicon devicewith current conduction capability of 42A, fast switchingspeed, low on-state resistance, breakdown voltagerating of 100V, and max. threshold voltage of 4 volts. They are designed for use in applications such as G

9.12. irf1503.pdf Size:245K _inchange_semiconductor

IRF151
IRF151

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1503 IIRF1503FEATURESStatic drain-source on-resistance:RDS(on) 3.3mEnhancement mode:Vth =2.0 to 4.0V (VDS = 10 V, ID=250A)Fast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide v

9.13. irf1503s.pdf Size:203K _inchange_semiconductor

IRF151
IRF151

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1503SFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM

9.14. irf150.pdf Size:231K _inchange_semiconductor

IRF151
IRF151

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF150DESCRIPTIONDrain Current I =40A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R =0.055(Max)DS(on)High Power,High Speed ApplicationsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching power supplies

Datasheet: IRF1310NL , IRF1310NS , IRF140 , IRF1404 , IRF141 , IRF142 , IRF143 , IRF150 , IRFP4232 , IRF153 , IRF230 , IRF240 , IRF250 , IRF2807 , IRF2807L , IRF2807S , IRF3205 .

 

 
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