All MOSFET. IRF250 Datasheet

 

IRF250 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF250

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Drain Current |Id|: 30 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.09 Ohm

Package: TO3

IRF250 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF250 Datasheet (PDF)

1.1. 2n6766_irf250.pdf Size:145K _international_rectifier

IRF250
IRF250

PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766 HEXFET?TRANSISTORS JANTXV2N6766 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543] 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF250 200V 0.085? 30A The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. TO-3 The efficient geometry and unique processing

Datasheet: IRF141 , IRF142 , IRF143 , IRF150 , IRF151 , IRF153 , IRF230 , IRF240 , 2SK3568 , IRF2807 , IRF2807L , IRF2807S , IRF3205 , IRF3205L , IRF3205S , IRF330 , IRF3315 .

 


IRF250
  IRF250
  IRF250
  IRF250
 
IRF250
  IRF250
  IRF250
  IRF250
 

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