IRF250 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF250
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Drain Current |Id|: 30 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.09 Ohm
Package: TO3
IRF250 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF250 Datasheet (PDF)
1.1. 2n6766_irf250.pdf 
Size:145K _international_rectifier
PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766 HEXFET?TRANSISTORS JANTXV2N6766 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543] 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF250 200V 0.085? 30A The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. TO-3 The efficient geometry and unique processing
Datasheet: IRF141 , IRF142 , IRF143 , IRF150 , IRF151 , IRF153 , IRF230 , IRF240 , 2SK3568 , IRF2807 , IRF2807L , IRF2807S , IRF3205 , IRF3205L , IRF3205S , IRF330 , IRF3315 .
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