IRF250 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF250
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 30 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 115 nC
Rise Time (tr): 100 nS
Drain-Source Capacitance (Cd): 800 pF
Maximum Drain-Source On-State Resistance (Rds): 0.085 Ohm
Package: TO3
IRF250 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF250 Datasheet (PDF)
1.1. irf250b irf250c.pdf 
Size:410K _upd
RoHS IRF250 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET 30A, 200Volts DESCRIPTION D The Nell IRF250 is a three-terminal silicon device with current conduction capability of 30A, fast switching speed, low on-state resistance, breakdown voltage rating of 200V, and max. threshold voltage of 4 volts. They are designed for use in applications such as G
1.2. irf250smd.pdf Size:23K _upd
IRF250SMD MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET VDSS 200V ID(cont) 14A RDS(on) 0.100 FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT – EFFICIENT USE OF PCB SPACE. • SIMPLE DRIVE REQUIREMENTS
1.3. irf250 irf251 irf252 irf253.pdf Size:215K _upd

1.4. 2n6766 irf250.pdf Size:145K _international_rectifier
PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766 HEXFET?TRANSISTORS JANTXV2N6766 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543] 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF250 200V 0.085? 30A The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. TO-3 The efficient geometry and unique processing
Datasheet: IRF141 , IRF142 , IRF143 , IRF150 , IRF151 , IRF153 , IRF230 , IRF240 , 2SK3568 , IRF2807 , IRF2807L , IRF2807S , IRF3205 , IRF3205L , IRF3205S , IRF330 , IRF3315 .
