IRF250 Todos los transistores

PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766 HEXFET TRANSISTORS JANTXV2N6766 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/543] 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF250 200V 0.085 30A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. TO-3 The efficient geometry and unique

IRF250P224 MOSFET StrongIRFET V 250V D DSS R DS(on) typ. 9.0m G Applications max 12m UPS and Inverter applications S I 128A D Half-bridge and full-bridge topologies Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power switches Brushed and BLDC Motor drive applications Battery powered circuits

IRF250P225 IR MOSFET - StrongIRFET V 250V D DSS R DS(on) typ. 18m G max 22m Applications S I 69A D UPS and Inverter applications Half-bridge and full-bridge topologies D Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power switches S D Brushed and BLDC Motor drive applications G TO-247AC

IRF250SMD MECHANICAL DATA Dimensions in mm (inches) N CHANNEL POWER MOSFET VDSS 200V ID(cont) 14A RDS(on) 0.100 FEATURES HERMETICALLY SEALED SURFACE MOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OF PCB SPACE. SIMPLE DRIVE REQUIREMENTS

RoHS IRF250 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET 30A, 200Volts DESCRIPTION D The Nell IRF250 is a three-terminal silicon device with current conduction capability of 30A, fast switching speed, low on-state resistance, breakdown voltage rating of 200V, and max. threshold voltage of 4 volts. They are designed for use in applications such as G

isc N-Channel MOSFET Transistor IRF250P224 IIRF250P224 FEATURES Static drain-source on-resistance RDS(on) 12m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION OR-ring and redundant power switches ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF250P225 IIRF250P225 FEATURES Static drain-source on-resistance RDS(on) 22m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION OR-ring and redundant power switches ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA