IRF250 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF250

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 150 W

Tensión drenaje-fuente (Vds): 200 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 30 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 115 nC

Tiempo de elevación (tr): 100 nS

Conductancia de drenaje-sustrato (Cd): 800 pF

Resistencia drenaje-fuente RDS(on): 0.085 Ohm

Empaquetado / Estuche: TO3

Búsqueda de reemplazo de MOSFET IRF250

IRF250 Datasheet (PDF)

1.1. irf250 irf251 irf252 irf253.pdf Size:215K _upd

1.2. irf250b irf250c.pdf Size:410K _upd

RoHS IRF250 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET 30A, 200Volts DESCRIPTION D The Nell IRF250 is a three-terminal silicon device with current conduction capability of 30A, fast switching speed, low on-state resistance, breakdown voltage rating of 200V, and max. threshold voltage of 4 volts. They are designed for use in applications such as G

1.3. irf250smd.pdf Size:23K _upd

IRF250SMD MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET VDSS 200V ID(cont) 14A RDS(on) 0.100 FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT – EFFICIENT USE OF PCB SPACE. • SIMPLE DRIVE REQUIREMENTS

1.4. irf250p224.pdf Size:1062K _update-mosfet

IRF250P224 MOSFET StrongIRFET™ V 250V D DSS R DS(on) typ. 9.0m G Applications max 12m  UPS and Inverter applications S I 128A D  Half-bridge and full-bridge topologies  Resonant mode power supplies  DC/DC and AC/DC converters  OR-ing and redundant power switches  Brushed and BLDC Motor drive applications  Battery powered circuits

1.5. irf250p225.pdf Size:1059K _update-mosfet

IRF250P225 IR MOSFET - StrongIRFET™ V 250V D DSS R DS(on) typ. 18m G max 22m Applications S I 69A D  UPS and Inverter applications  Half-bridge and full-bridge topologies D  Resonant mode power supplies  DC/DC and AC/DC converters  OR-ing and redundant power switches S D  Brushed and BLDC Motor drive applications G TO-247AC

1.6. 2n6766 irf250.pdf Size:145K _international_rectifier

PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766 HEXFET?TRANSISTORS JANTXV2N6766 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543] 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF250 200V 0.085? 30A The HEXFET?technology is the key to International Rectifier�s advanced line of power MOSFET transistors. TO-3 The efficient geometry and unique processing

1.7. irf250p224.pdf Size:241K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRF250P224，IIRF250P224 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤12mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·OR-ring and redundant power switches ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

1.8. irf250p225.pdf Size:242K _inchange_semiconductor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF250P225，IIRF250P225 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤22mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·OR-ring and redundant power switches ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VA

Otros transistores... IRF141 , IRF142 , IRF143 , IRF150 , IRF151 , IRF153 , IRF230 , IRF240 , 2SK3568 , IRF2807 , IRF2807L , IRF2807S , IRF3205 , IRF3205L , IRF3205S , IRF330 , IRF3315 .

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