IRF250 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF250
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 150 W
Tensión drenaje-fuente |Vds|: 200 V
Tensión compuerta-fuente |Vgs|: 20 V
Corriente continua de drenaje |Id|: 30 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente |Vgs(th)|: 4 V
Carga de compuerta (Qg): 115(max) nC
Tiempo de elevación (tr): 190(max) nS
Conductancia de drenaje-sustrato (Cd): 700 pF
Resistencia drenaje-fuente RDS(on): 0.085 Ohm
Empaquetado / Estuche: TO3
Búsqueda de reemplazo de MOSFET IRF250
IRF250 Datasheet (PDF)
..1. 2n6766 irf250.pdf 
Size:145K _international_rectifier
PD - 90338EIRF250REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766HEXFETTRANSISTORS JANTXV2N6766THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543]200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF250 200V 0.085 30AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.TO-3The efficient geometry and unique
..2. irf250 irf251 irf252 irf253.pdf Size:215K _samsung
0.1. irf250p224.pdf Size:1062K _infineon
IRF250P224 MOSFET StrongIRFET V 250V D DSS RDS(on) typ. 9.0m GApplications max 12m UPS and Inverter applications SI 128A D Half-bridge and full-bridge topologies Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power switches Brushed and BLDC Motor drive applications Battery powered circuits
0.2. irf250p225.pdf Size:1059K _infineon
IRF250P225 IR MOSFET - StrongIRFET V 250V D DSS RDS(on) typ. 18m Gmax 22m Applications SI 69A D UPS and Inverter applications Half-bridge and full-bridge topologies D Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power switches S D Brushed and BLDC Motor drive applications G TO-247AC
0.3. irf250smd.pdf Size:23K _semelab
IRF250SMDMECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET VDSS 200V ID(cont) 14A RDS(on) 0.100FEATURES HERMETICALLY SEALED SURFACEMOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OFPCB SPACE. SIMPLE DRIVE REQUIREMENTS
0.4. irf250b irf250c.pdf Size:410K _nell
RoHS IRF250 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET30A, 200VoltsDESCRIPTIOND The Nell IRF250 is a three-terminal silicon devicewith current conduction capability of 30A, fast switchingspeed, low on-state resistance, breakdown voltagerating of 200V, and max. threshold voltage of 4 volts. They are designed for use in applications such as G
0.5. irf250p224.pdf Size:241K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRF250P224IIRF250P224FEATURESStatic drain-source on-resistance:RDS(on)12mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONOR-ring and redundant power switchesABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source
0.6. irf250p225.pdf Size:242K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF250P225IIRF250P225FEATURESStatic drain-source on-resistance:RDS(on)22mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONOR-ring and redundant power switchesABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA
Otros transistores... IRF141 , IRF142 , IRF143 , IRF150 , IRF151 , IRF153 , IRF230 , IRF240 , IRFP064N , IRF2807 , IRF2807L , IRF2807S , IRF3205 , IRF3205L , IRF3205S , IRF330 , IRF3315 .
