IRF250 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF250
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 150 W
Предельно допустимое напряжение сток-исток (Uds): 200 V
Предельно допустимое напряжение затвор-исток (Ugs): 20 V
Пороговое напряжение включения Ugs(th): 4 V
Максимально допустимый постоянный ток стока (Id): 30 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 115 nC
Время нарастания (tr): 100 ns
Выходная емкость (Cd): 800 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.085 Ohm
Тип корпуса: TO3
IRF250 Datasheet (PDF)
1.1. 2n6766 irf250.pdf 
Size:145K _international_rectifier
PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766 HEXFETTRANSISTORS JANTXV2N6766 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543] 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF250 200V 0.085Ω 30A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. TO-3 The efficient geometry and unique
1.2. irf250 irf251 irf252 irf253.pdf Size:215K _samsung
1.3. irf250p224.pdf Size:1062K _infineon
IRF250P224 MOSFET StrongIRFET™ V 250V D DSS R DS(on) typ. 9.0m G Applications max 12m UPS and Inverter applications S I 128A D Half-bridge and full-bridge topologies Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power switches Brushed and BLDC Motor drive applications Battery powered circuits
1.4. irf250p225.pdf Size:1059K _infineon
IRF250P225 IR MOSFET - StrongIRFET™ V 250V D DSS R DS(on) typ. 18m G max 22m Applications S I 69A D UPS and Inverter applications Half-bridge and full-bridge topologies D Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power switches S D Brushed and BLDC Motor drive applications G TO-247AC
1.5. irf250smd.pdf Size:23K _semelab
IRF250SMD MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET VDSS 200V ID(cont) 14A RDS(on) 0.100 FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT – EFFICIENT USE OF PCB SPACE. • SIMPLE DRIVE REQUIREMENTS
1.6. irf250b irf250c.pdf Size:410K _nell
RoHS IRF250 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET 30A, 200Volts DESCRIPTION D The Nell IRF250 is a three-terminal silicon device with current conduction capability of 30A, fast switching speed, low on-state resistance, breakdown voltage rating of 200V, and max. threshold voltage of 4 volts. They are designed for use in applications such as G
Другие MOSFET... IRF141 , IRF142 , IRF143 , IRF150 , IRF151 , IRF153 , IRF230 , IRF240 , 2SK3568 , IRF2807 , IRF2807L , IRF2807S , IRF3205 , IRF3205L , IRF3205S , IRF330 , IRF3315 .
