All MOSFET. IRF2807S Datasheet


IRF2807S MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF2807S

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 200 W

Maximum Drain-Source Voltage |Vds|: 75 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 82 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 106.7 nC

Maximum Drain-Source On-State Resistance (Rds): 0.013 Ohm

Package: D2PAK

IRF2807S Transistor Equivalent Substitute - MOSFET Cross-Reference Search


IRF2807S Datasheet (PDF)

0.1. irf2807lpbf irf2807spbf.pdf Size:272K _international_rectifier


PD - 95945IRF2807SPbFIRF2807LPbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS = 75Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 13ml Fully Avalanche RatedGl Lead-FreeID = 82ADescriptionSAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques

0.2. irf2807s.pdf Size:124K _international_rectifier


PD - 94170IRF2807SIRF2807LHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 75V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 13m Fast SwitchingG Fully Avalanche RatedID = 82A DescriptionSAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low o

 0.3. irf2807s.pdf Size:258K _inchange_semiconductor


Isc N-Channel MOSFET Transistor IRF2807SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

Datasheet: IRF150 , IRF151 , IRF153 , IRF230 , IRF240 , IRF250 , IRF2807 , IRF2807L , IRF9530 , IRF3205 , IRF3205L , IRF3205S , IRF330 , IRF3315 , IRF3315L , IRF3315S , IRF340 .


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