All MOSFET. IRF2807S Datasheet

 

IRF2807S MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF2807S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 82 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 64 nS
   Cossⓘ - Output Capacitance: 610 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO263
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IRF2807S Datasheet (PDF)

 ..1. Size:272K  international rectifier
irf2807lpbf irf2807spbf.pdf pdf_icon

IRF2807S
IRF2807S

PD - 95945IRF2807SPbFIRF2807LPbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS = 75Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 13ml Fully Avalanche RatedGl Lead-FreeID = 82ADescriptionSAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques

 ..2. Size:124K  international rectifier
irf2807s.pdf pdf_icon

IRF2807S
IRF2807S

PD - 94170IRF2807SIRF2807LHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 75V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 13m Fast SwitchingG Fully Avalanche RatedID = 82A DescriptionSAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low o

 ..3. Size:272K  infineon
irf2807spbf irf2807lpbf.pdf pdf_icon

IRF2807S
IRF2807S

PD - 95945IRF2807SPbFIRF2807LPbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS = 75Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 13ml Fully Avalanche RatedGl Lead-FreeID = 82ADescriptionSAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques

 ..4. Size:258K  inchange semiconductor
irf2807s.pdf pdf_icon

IRF2807S
IRF2807S

Isc N-Channel MOSFET Transistor IRF2807SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

Datasheet: IRF150 , IRF151 , IRF153 , IRF230 , IRF240 , IRF250 , IRF2807 , IRF2807L , STF13NM60N , IRF3205 , IRF3205L , IRF3205S , IRF330 , IRF3315 , IRF3315L , IRF3315S , IRF340 .

 

 
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