All MOSFET. IRF240 Datasheet

 

IRF240 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF240

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 18 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 60 nC

Rise Time (tr): 60 nS

Drain-Source Capacitance (Cd): 360 pF

Maximum Drain-Source On-State Resistance (Rds): 0.18 Ohm

Package: TO3

IRF240 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF240 Datasheet (PDF)

0.1. irf240.pdf Size:146K _international_rectifier

IRF240
IRF240

PD - 90370REPETITIVE AVALANCHE AND dv/dt RATEDHEXFETTRANSISTORS IRF240THRU-HOLE (TO-204AA/AE)200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF240 200V 0.18 18AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art design a

0.2. irf240 irf241 irf242 irf243.pdf Size:215K _samsung

IRF240
IRF240

 0.3. irf240smd.pdf Size:22K _semelab

IRF240
IRF240

IRF240SMDSEMELABMECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET VDSS 200V ID(cont) 13.9A RDS(on) 0.180FEATURES HERMETICALLY SEALED SURFACEMOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OFPCB SPACE. SIMPLE DRIVE REQUIREMENTS

Datasheet: IRF1404 , IRF141 , IRF142 , IRF143 , IRF150 , IRF151 , IRF153 , IRF230 , IRFB4227 , IRF250 , IRF2807 , IRF2807L , IRF2807S , IRF3205 , IRF3205L , IRF3205S , IRF330 .

 

 
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