IRF240 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF240
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 18 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 60 nC
Rise Time (tr): 60 nS
Drain-Source Capacitance (Cd): 360 pF
Maximum Drain-Source On-State Resistance (Rds): 0.18 Ohm
Package: TO3
IRF240 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF240 Datasheet (PDF)
1.1. irf240 irf241 irf242 irf243.pdf 
Size:215K _upd

1.2. irf240smd.pdf Size:22K _upd
IRF240SMD SEME LAB MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET VDSS 200V ID(cont) 13.9A RDS(on) 0.180 FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT – EFFICIENT USE OF PCB SPACE. • SIMPLE DRIVE REQUIREMENTS
1.3. irf240.pdf Size:146K _international_rectifier
PD - 90370 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?TRANSISTORS IRF240 THRU-HOLE (TO-204AA/AE) 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF240 200V 0.18? 18A The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very l
Datasheet: IRF1404 , IRF141 , IRF142 , IRF143 , IRF150 , IRF151 , IRF153 , IRF230 , IRFB4227 , IRF250 , IRF2807 , IRF2807L , IRF2807S , IRF3205 , IRF3205L , IRF3205S , IRF330 .
