IRF240 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF240
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 18 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 60 nC
Rise Time (tr): 60 nS
Drain-Source Capacitance (Cd): 360 pF
Maximum Drain-Source On-State Resistance (Rds): 0.18 Ohm
Package: TO3
IRF240 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF240 Datasheet (PDF)
0.1. irf240.pdf 
Size:146K _international_rectifier
PD - 90370REPETITIVE AVALANCHE AND dv/dt RATEDHEXFETTRANSISTORS IRF240THRU-HOLE (TO-204AA/AE)200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF240 200V 0.18 18AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art design a
0.2. irf240 irf241 irf242 irf243.pdf Size:215K _samsung
0.3. irf240smd.pdf Size:22K _semelab
IRF240SMDSEMELABMECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET VDSS 200V ID(cont) 13.9A RDS(on) 0.180FEATURES HERMETICALLY SEALED SURFACEMOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OFPCB SPACE. SIMPLE DRIVE REQUIREMENTS
Datasheet: IRF1404 , IRF141 , IRF142 , IRF143 , IRF150 , IRF151 , IRF153 , IRF230 , IRFB4227 , IRF250 , IRF2807 , IRF2807L , IRF2807S , IRF3205 , IRF3205L , IRF3205S , IRF330 .
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