IRF1407 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF1407
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 330 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 130 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 160 nC
trⓘ - Rise Time: 150 nS
Cossⓘ - Output Capacitance: 890 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm
Package: TO220AB
IRF1407 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF1407 Datasheet (PDF)
irf1407.pdf
PD - 93907AUTOMOTIVE MOSFETIRF1407Typical ApplicationsHEXFET Power MOSFET Integrated Starter AlternatorD 42 Volts Automotive Electrical SystemsVDSS = 75VBenefits Advanced Process TechnologyRDS(on) = 0.0078 Ultra Low On-ResistanceG Dynamic dv/dt Rating 175C Operating Temperature ID = 130AVS Fast Switching Repetitive Avalanche Allowed up to TjmaxDescri
irf1407pbf.pdf
PD - 95485AIRF1407PbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveDBenefitsVDSS = 75V Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 0.0078 Dynamic dv/dt RatingG 175C Operating Temperature Fast SwitchingID = 130AS Repetitive Avalanche Allowed up to TjmaxDescriptionThis Stripe Planar design of HEXFET Power MOSFETs
irf1407pbf.pdf
PD - 95485AIRF1407PbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveDBenefitsVDSS = 75V Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 0.0078 Dynamic dv/dt RatingG 175C Operating Temperature Fast SwitchingID = 130AS Repetitive Avalanche Allowed up to TjmaxDescriptionThis Stripe Planar design of HEXFET Power MOSFETs
irf1407.pdf
isc N-Channel MOSFET Transistor IRF1407IIRF1407FEATURESStatic drain-source on-resistance:RDS(on) 7.8mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM
irf1407l.pdf
PD -94335IRF1407SIRF1407LBenefits Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingD 175C Operating TemperatureVDSS = 75V Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 0.0078DescriptionGAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieve
irf1407s.pdf
PD -94335IRF1407SIRF1407LBenefits Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingD 175C Operating TemperatureVDSS = 75V Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 0.0078DescriptionGAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieve
irf1407l.pdf
isc N-Channel MOSFET Transistor IRF1407LFEATURESStatic drain-source on-resistance:RDS(on) 7.8mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME
irf1407s.pdf
Isc N-Channel MOSFET Transistor IRF1407SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
LIST
Last Update
MOSFET: NCES120R018T4 | NCES120P075T4 | NCES120P035T4 | NCES075R026T4 | NCES075R026T | NCEP60ND60G | NCEP60ND30AG | NCEP40T14A | NCEP40ND80G | NCEP1580F | NCEP023NH85GU | NCEP023NH85AGU | NCEP018NH30QU | NCEP015NH30GU | NCEP015NH30AQU | NCEP015NH30AGU